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Chin. Phys. B, 2010, Vol. 19(8): 088104    DOI: 10.1088/1674-1056/19/8/088104
CROSS DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

A general surface-treatment-free approach to fabrication of alignment layers using a super-aligned carbon nanotube film template

Fu Wei-Qi(付伟琦), Wei Yang(魏洋), Zhu Feng(朱峰), Liu Liang(刘亮) Jiang Kai-Li(姜开利), Li Qun-Qing(李群庆), and Fan Shou-Shan(范守善)
Department of Physics and Tsinghua–Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Abstract  We develop a general approach to the fabrication of films with unidirectional grooves, such as silicon nitride, silicon dioxide and aluminium oxide, in which the surface is not required to be treated. Super-aligned carbon nanotube (SACNT) film may be used as a template and as sacrificial layer, which is subsequently removed by heating in an atmosphere of air. The unidirectional morphology of the SACNT film turns into a desired film, which is found to possess the ability to align liquid crystal molecules. This approach also features high efficiency, low cost and easy scaling-up for mass production.
Keywords:  super-aligned carbon nanotube film      alignment layer      template  
Received:  22 February 2010      Revised:  03 March 2010      Accepted manuscript online: 
PACS:  81.16.-c (Methods of micro- and nanofabrication and processing)  
  61.46.Fg (Nanotubes)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.65.-b (Surface treatments)  
  85.60.Pg (Display systems)  
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2005CB623606 and 2007CB935301) and the National Natural Science Foundation of China (Gant Nos. 10704044, 50825201, and 10721404).

Cite this article: 

Fu Wei-Qi(付伟琦), Wei Yang(魏洋), Zhu Feng(朱峰), Liu Liang(刘亮) Jiang Kai-Li(姜开利), Li Qun-Qing(李群庆), and Fan Shou-Shan(范守善) A general surface-treatment-free approach to fabrication of alignment layers using a super-aligned carbon nanotube film template 2010 Chin. Phys. B 19 088104

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