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Influence of reducing anneal on the ferromagnetism in single crystalline Co-doped ZnO thin films |
Lu Zhong-Lin(路忠林)a)b)†, Zou Wen-Qin(邹文琴)c), Xu Ming-Xiang (徐明祥)a), and Zhang Feng-Ming(张凤鸣)c) |
a Department of Physics, Southeast University, Nanjing 210096, China; b Physics Department and Institute of Innovations and Advanced Studies (IIAS), National Cheng Kung University, Tainan 701, China; c Jiangsu Provincial Laboratory for Nanotechnology, National Laboratory of Solid State Microstructure, and Department of Physics, Nanjing University, Nanjing 210093, China |
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Abstract This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on $a$-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become good conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism (0.16 $\mu _{\rm B}$/Co$^{2 + })$ in the Zn$_{0.95}$Co$_{0.05}$O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism (0.65 $\mu _{\rm B}$/Co$^{2 + })$ at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed.
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Received: 29 August 2009
Revised: 23 September 2009
Accepted manuscript online:
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PACS:
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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75.50.Pp
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(Magnetic semiconductors)
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78.70.Dm
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(X-ray absorption spectra)
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68.55.A-
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(Nucleation and growth)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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73.61.Ga
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(II-VI semiconductors)
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Fund: Project partially supported by
National Science Foundation of China (Grant No.~10804017), National
Science Foundation of Jiangsu Province of China (Grant
No.~BK2007118), Research Fund for the Doctoral Program of Higher
Education of China (Grant No.~20070286037), Cyanine-Project
Foundation of Jiangsu Province of China (Grant No.~1107020060),
Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu
Province of China (Grant No.~1107020070) and New Century Excellent
Talents in University (NCET-05-0452). |
Cite this article:
Lu Zhong-Lin(路忠林), Zou Wen-Qin(邹文琴), Xu Ming-Xiang (徐明祥), and Zhang Feng-Ming(张凤鸣) Influence of reducing anneal on the ferromagnetism in single crystalline Co-doped ZnO thin films 2010 Chin. Phys. B 19 056101
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