Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

doi:10.1088/1674-1056/19/10/106106

Abstract In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10¹⁶ cm^{- 2}, and subsequent annealing was performed at 1100 ℃. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance--voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Keywords: silicon-on-insulator wafers radiation hardness nitrogen implantation

Received: 24 January 2010
Revised: 26 April 2010
Accepted manuscript online:

PACS:	61.80.Jh	(Ion radiation effects)
	61.82.Ms	(Insulators)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	78.30.Am	(Elemental semiconductors and insulators)
	81.40.Gh	(Other heat and thermomechanical treatments)
	81.40.Wx	(Radiation treatment)

Fund: Project supported by the Doctoral Science Foundation of University of Jinan.

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Tang Hai-Ma(唐海马), Zheng Zhong-Shan(郑中山), Zhang En-Xia(张恩霞), Yu Fang(于芳), Li Ning(李宁), and Wang Ning-Juan(王宁娟) Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 2010 Chin. Phys. B 19 106106

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[1]	Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Yu Fang (于芳), Li Ning (李宁 ). Chin. Phys. B, 2012, 21(11): 116104.
[2]	Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Zhang Guo-Qiang (张国强), Li Ning (李宁), Fan Kai (范楷), Zhang En-Xia (张恩霞), Yi Wan-Bing (易万兵), Chen Meng (陈猛), Wang Xi (王曦). Chin. Phys. B, 2005, 14(3): 565-570.

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Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

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