Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET
Zheng Zhong-Shan (郑中山)ac, Liu Zhong-Li (刘忠立)a, Zhang Guo-Qiang (张国强)a, Li Ning (李宁)a, Fan Kai (范楷)a, Zhang En-Xia (张恩霞)b, Yi Wan-Bing (易万兵)b, Chen Meng (陈猛)b, Wang Xi (王曦)b
a Microelectronics R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Chinac Department of Physics, Jinan University, Jinan 250022, China
Abstract The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8×1015, 2×1016 and 1×1017cm-2) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5×105rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8×1015cm-2 is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2×1016 and 1×1017cm-2, for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.
Received: 09 July 2004
Revised: 04 August 2004
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Cite this article:
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Zhang Guo-Qiang (张国强), Li Ning (李宁), Fan Kai (范楷), Zhang En-Xia (张恩霞), Yi Wan-Bing (易万兵), Chen Meng (陈猛), Wang Xi (王曦) Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET 2005 Chinese Physics 14 565
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
