Abstract This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.
Received: 30 December 2008
Revised: 11 February 2009
Accepted manuscript online:
Fund: Project supported by National Basic
Research Program of China (973 Program) (Grant No 2006CB806204) and
National Natural Science Foundation of China (Grant Nos 60676001,
60676008 and 60825403).
Cite this article:
Liu Ge(刘舸), Liu Ming(刘明), Wang Hong(王宏), Shang Li-Wei(商立伟), Ji Zhuo-Yu(姬濯宇), Liu Xing-Hua(刘兴华), and Liu Jiang(柳江) Study of top and bottom contact resistance in one organic field-effect transistor 2009 Chin. Phys. B 18 3530
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