Abstract Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.
Received: 05 June 2008
Revised: 08 August 2008
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of
China (Grant No 10575124).
Cite this article:
Li Bing-Sheng(李炳生), Zhang Chong-Hong(张崇宏), Yang Yi-Tao(杨义涛), Zhou Li-Hong(周丽宏), and Zhang Hong-Hua(张洪华) Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing 2009 Chin. Phys. B 18 246
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