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Chin. Phys. B, 2008, Vol. 17(7): 2683-2688    DOI: 10.1088/1674-1056/17/7/054

Effect of fabrication conditions on the properties of indium tin oxide powders

Xie Wei(谢卫)
Engineering Institute of Engineer Corps, PLA Univ. ofSci.Tech., Nanjing 210007, China;  First Scientific Research Institute of Wuxi, Wuxi 214035, China
Abstract  This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity $\varepsilon $ and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350${^\circ}$C and Sn doping content 6$\sim$8wt% are determined. The application of ITO in the military camouflage field is proposed.
Keywords:  tin-doped indium      sintering temperature      infrared emissivity      powder resistivity  
Received:  29 January 2008      Revised:  27 February 2008      Accepted manuscript online: 
PACS:  81.20.Fw (Sol-gel processing, precipitation)  
  61.72.S- (Impurities in crystals)  
  68.37.Lp (Transmission electron microscopy (TEM))  
  73.61.Le (Other inorganic semiconductors)  
  78.30.Hv (Other nonmetallic inorganics)  
  81.20.Ev (Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation)  

Cite this article: 

Xie Wei(谢卫) Effect of fabrication conditions on the properties of indium tin oxide powders 2008 Chin. Phys. B 17 2683

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