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Chin. Phys. B, 2008, Vol. 17(4): 1269-1273    DOI: 10.1088/1674-1056/17/4/020
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Sideband manipulation of population inversion in a three-level $\Lambda$ atomic system

Guo Hong-Ju(郭洪菊), Niu Yue-Ping(钮月萍), Jin Shi-Qi(金石琦), and Gong Shang-Qing(龚尚庆)
State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Abstract  Sideband manipulation of population inversion in a three-level $\Lambda$ atomic configuration is investigated theoretically. Compared with the case of a nearly monochromatic field, a population inversion between an excited state and a ground state has been found in a wide sideband intensity range by increasing the difference in frequency between three components. Furthermore, the population inversion can be controlled by the sum of the relative phases of the sideband components of the trichromatic pump field with respective to the phase of the central component. Changing the sum phase from 0 to $\pi$, the population inversion between the excited state and the ground state can increase within nearly half of the sideband intensity range. At the same time, the sideband intensity range that corresponds to the system exhibiting inversion $\rho_{00}>\rho_{11}$ also becomes wider evidently.
Keywords:  population inversion      sideband manipulation      relative phase  
Received:  08 September 2007      Revised:  08 October 2007      Accepted manuscript online: 
PACS:  42.50.-p (Quantum optics)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60708008), the Project of Academic Leaders in Shanghai, China (Grant No 07XD14030) and the Knowledge Innovation Program of the Chinese Academy of Sciences.

Cite this article: 

Guo Hong-Ju(郭洪菊), Niu Yue-Ping(钮月萍), Jin Shi-Qi(金石琦), and Gong Shang-Qing(龚尚庆) Sideband manipulation of population inversion in a three-level $\Lambda$ atomic system 2008 Chin. Phys. B 17 1269

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