Abstract Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO$_{2}$ (nc-Si/SiO$_{2})$ multilayers (MLs) obtained by thermal annealing of SiO/SiO$_{2}$ MLs for the first time. By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm, the PL peak blueshifts from 457 to 411 nm. Combining the analysis of TEM, Raman and absorption measurement, this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO$_{2}$.
Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos 60508009, 60471021,
60571008 and 10574069) and the Nature Science Foundation of Jiangsu
Province, China (Grant No BK2007135).
Cite this article:
Ma Zhong-Yuan(马忠元), Guo Si-Hua(郭四华), Chen De-Yuan(陈德媛), Wei De-Yuan(魏德远), Yao Yao(姚瑶), Zhou Jiang(周江), Huang Rui(黄锐), Li Wei(李伟), Xu Jun(徐骏), Xu Ling(徐岭), Huang Xin-Fan(黄信凡), Chen Kun-Ji(陈坤基), and Feng Duan(冯端) The origin of blue photoluminescence from nc-Si/SiO2 multilayers 2008 Chin. Phys. B 17 303
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