Simulation of multilayer homoepitaxial growth on Cu (100) surface
Wu Feng-Min (吴锋民)a, Lu Hang-Jun (陆杭军)a, Wu Zi-Qin (吴自勤)b
a Institute of Condensed Matter Physics, Zhejiang Normal University, Jinhua 321004, China; b Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026, China
Abstract The processes of multilayer thin Cu films grown on Cu (100) surfaces at elevated temperature (250--400\,K) are simulated by mean of kinetic Monte Carlo (KMC) method, where the realistic growth model and physical parameters are used. The effects of small island (dimer and trimer) diffusion, edge diffusion along the islands, exchange of the adatom with an atom in the existing island, as well as mass transport between interlayers are included in the simulation model. Emphasis is placed on revealing the influence of the Ehrlich--Schwoebel (ES) barrier on growth mode and morphology during multilayer thin film growth. We present numerical evidence that the ES barrier does exist for the Cu/Cu(100) system and an ES barrier $E_{\rm B} >0.125$ eV is estimated from a comparison of the KMC simulation with the realistic experimental images. The transitions of growth modes with growth conditions and the influence of exchange barrier on growth mode are also investigated.
Received: 22 November 2005
Revised: 27 December 2005
Accepted manuscript online:
A shortcut for determining growth mode R. A. Rehman, Cai Yi-Liang (蔡亦良), Zhang Han-Jie (张寒洁), Wu Ke (吴珂), Dou Wei-Dong (窦卫东), Li Hai-Yang (李海洋), He Pi-Mo (何丕模), Bao Shi-Ning (鲍世宁). Chin. Phys. B, 2013, 22(10): 107202.
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