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Chinese Physics, 2005, Vol. 14(6): 1232-1237    DOI: 10.1088/1009-1963/14/6/030
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effect of electron-phonon interactions on dynamical localization of semiconductor superlattices

Wang Zhi-Gang (王志刚), Duan Su-Qing (段素青), Zhao Xian-Geng (赵宪庚)
Institute of Applied Physics and Computational Mathematics, P.O.Box 8009, Beijing P. R. China, 100088
Abstract  Effect of the electron-phonon interactions on the property of dynamical localization of semiconductor superlattices in a single-band model under the actions of the electric dc and acfield, respectively, are investigated. The results show that the electron-phonon interactions can destroy the dynamical localization of the electron. For the same phonon frequency, when the strength of the electron-phonon interactions becomes larger, the electron is more quickly scattered. When the phonon frequency equals to the Bloch frequency ΩB in dc field or Ωin ac field or one of them in dc-ac field, the electron initially localized at the 0th site can be rapidly scattered to the other sites, where Ω is the frequency of the ac field. The property of the dynamical localization of the electron is seriously destroyed by the photon-phonon resonant field.
Keywords:  electron-phonon interactions      dynamical localization  
Received:  02 August 2004      Revised:  16 December 2004      Accepted manuscript online: 
PACS:  63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials)  
  63.20.K- (Phonon interactions)  

Cite this article: 

Wang Zhi-Gang (王志刚), Duan Su-Qing (段素青), Zhao Xian-Geng (赵宪庚) Effect of electron-phonon interactions on dynamical localization of semiconductor superlattices 2005 Chinese Physics 14 1232

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