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Chinese Physics, 2004, Vol. 13(12): 2153-2157    DOI: 10.1088/1009-1963/13/12/031
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The effect of Pd doped in Ru layer on the interlayer coupling in Co/RuPd multilayers

Zhang Ai-Guo (张爱国), Wang Yin-Jun (王荫君), Han Xiu-Feng (韩秀峰), Zhan Wen-Shan (詹文山)
State Key Laboratory for Magnetism, Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract  2.0nmCo/tnmRu$_{1-x}$Pd$_x$ multilayers with x=0, 0.05, 0.08, 0.24, 0.39 and 0.48 were prepared by magnetron sputtering. The spacer layer thickness of both Ru (before doping Pd) and RuPd (after doping Pd) varies from 0.2nm to 1.6nm. Two effects have been investigated: (1) the dependence of the interlayer coupling on the thickness of Ru$_{1-x}$Pd$_x$ as a function of x and (2) the dependence of the interlayer coupling on Pd doping density, x, as a function of thickness of Ru$_{1-x}$Pd$_x$. Our results indicate that the interlayer coupling is strongly dependent on the doping density and the spacer layer thickness. The saturation field $H_s$ increases when very low concentration of Pd doped in the Ru layers and a suitable spacer thickness are adopted.
Keywords:  interlayer antiferromagnetic coupling      magnetic recording      doping effect  
Received:  25 May 2004      Revised:  23 June 2004      Accepted manuscript online: 
PACS:  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
  75.50.Ss (Magnetic recording materials)  
  75.50.Ee (Antiferromagnetics)  
  81.15.Cd (Deposition by sputtering)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60171031).

Cite this article: 

Zhang Ai-Guo (张爱国), Wang Yin-Jun (王荫君), Han Xiu-Feng (韩秀峰), Zhan Wen-Shan (詹文山) The effect of Pd doped in Ru layer on the interlayer coupling in Co/RuPd multilayers 2004 Chinese Physics 13 2153

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