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Acta Physica Sinica (Overseas Edition), 1999, Vol. 8(12): 919-926    DOI: 10.1088/1004-423X/8/12/007
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

CONTRIBUTION FROM MOLDCULAR FIELD TO THE TEMPERATURE DEPENDENCE OF TUNNELING MAGNETORESISTANCE

WANG JUN-ZHONG (王俊忠)a, LI BO-ZANG (李伯藏)ab, GAO JUN-SHAN (高俊山)c
a Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; 
b Institute of Theoretical Physics, Shanxi University, Thiyuan 030006, China; c North China Institute of Astronautic Engineering, Langfang, 065000, China
Abstract  Based on the nearly free-electron approximation, we have investigaed the temperature (T) dependence of spin-polarized tunneling in the magnetic tunnel junction with an asymmetrical barrier, with emphasis on the variation of molecular field with T in the same way as that of surface magnetization. It is found that the Slonczewski model can describe well the T depen-dence of spin-polarized tunneling, while the Julliere model only describes the T dependence of JMR qualitatively, but does accurately that of the difference of tunneling conductance between the parallel and antiparallal alignments for the magnetizations of FMs; Differing from the pre-vious finding, we find the electron spin polarization is not strictly proportional to the surface magnetization, for the former decreases with the increasing T more rapidly than the latter does.
Received:  17 March 1999      Accepted manuscript online: 
PACS:  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
  75.70.Rf (Surface magnetism)  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
  73.40.Gk (Tunneling)  

Cite this article: 

WANG JUN-ZHONG (王俊忠), LI BO-ZANG (李伯藏), GAO JUN-SHAN (高俊山) CONTRIBUTION FROM MOLDCULAR FIELD TO THE TEMPERATURE DEPENDENCE OF TUNNELING MAGNETORESISTANCE 1999 Acta Physica Sinica (Overseas Edition) 8 919

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