POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si
LU ZHI-HENG (卢志恒)a, WANG DA-CHUN (王大椿)a, G.K·gelb
a Department of Physics, Beijing Normal University, Beijing 100875, China; b Institut für Kern-Festk$\ddot{\rm o}$rperphysik, Bundeswehr Universit$\bar{\rm a}$t, Germany
Abstract The lifetime spectroscopy of slow positron accelerated with linear accelerator and pulse punch system was first used to analyze the vacancies in the thin surface layer of silicon heavily doped with arsenic. The results demonstrated that no mono-vacancy was detected to support the arsenic-vacancy complex models for explaining the electrical deactivation mechanism of arsenic-heavily-doped silicon.
Received: 30 June 1992
Accepted manuscript online:
Fund: Project supported in part by the National Natural Science Foundation of China and in part by the Department of Science and Research of Germany.
Cite this article:
LU ZHI-HENG (卢志恒), WANG DA-CHUN (王大椿), G.K·gel POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si 1993 Acta Physica Sinica (Overseas Edition) 2 577
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