Abstract An energy dependence of the axial minimum channeling yield in GexSi1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He+ ione from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements ere in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He+ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.
Received: 22 September 1992
Accepted manuscript online:
PACS:
61.85.+p
(Channeling phenomena (blocking, energy loss, etc.) ?)
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