中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98506-098506.doi: 10.1088/1674-1056/ace248

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Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波)   

  1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2023-02-25 修回日期:2023-05-22 接受日期:2023-06-28 发布日期:2023-09-07
  • 通讯作者: Xiaorong Luo E-mail:xrluo@uestc.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundations of China (Grant Nos. 61874149 and U20A20208) and the Outstanding Youth Science and Technology Foundation of China (Grant No. 2018-JCJQ-ZQ-060).

Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波)   

  1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2023-02-25 Revised:2023-05-22 Accepted:2023-06-28 Published:2023-09-07
  • Contact: Xiaorong Luo E-mail:xrluo@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundations of China (Grant Nos. 61874149 and U20A20208) and the Outstanding Youth Science and Technology Foundation of China (Grant No. 2018-JCJQ-ZQ-060).

摘要: A novel normally-off double channel reverse conducting (DCRC) HEMT with an integrated MOS-channel diode (MCD) is proposed and investigated by TCAD simulation. The proposed structure has two features: one is double heterojunctions to form dual 2DEG channels named the 1st path and the 2nd path for reverse conduction, and the other is the MCD forming by the trench source metal, source dielectric, and GaN. At the initial reverse conduction stage, the MCD acts as a switch to control the 1st path which would be turned on prior to the 2nd path. Because of the introduction of the 1st path, the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance. Compared with the conventional HEMT (Conv. HEMT), the DCRC-HEMT can obtain a low reverse turn-on voltage (VRT) and its VRT is independent of the gate-source bias (VGS) at the same time. The DCRC-HEMT achieves the VRT of 0.62 V, which is 59.7% and 75.9% lower than that of the Conv. HEMT at VGS = 0 V and -1 V, respectively. In addition, the forward conduction capability and blocking characteristics almost remain unchanged. In the end, the key fabrication flows of DCRC-HEMT are presented.

关键词: AlGaN/GaN, HEMT, double-channel, reverse conduction

Abstract: A novel normally-off double channel reverse conducting (DCRC) HEMT with an integrated MOS-channel diode (MCD) is proposed and investigated by TCAD simulation. The proposed structure has two features: one is double heterojunctions to form dual 2DEG channels named the 1st path and the 2nd path for reverse conduction, and the other is the MCD forming by the trench source metal, source dielectric, and GaN. At the initial reverse conduction stage, the MCD acts as a switch to control the 1st path which would be turned on prior to the 2nd path. Because of the introduction of the 1st path, the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance. Compared with the conventional HEMT (Conv. HEMT), the DCRC-HEMT can obtain a low reverse turn-on voltage (VRT) and its VRT is independent of the gate-source bias (VGS) at the same time. The DCRC-HEMT achieves the VRT of 0.62 V, which is 59.7% and 75.9% lower than that of the Conv. HEMT at VGS = 0 V and -1 V, respectively. In addition, the forward conduction capability and blocking characteristics almost remain unchanged. In the end, the key fabrication flows of DCRC-HEMT are presented.

Key words: AlGaN/GaN, HEMT, double-channel, reverse conduction

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 51.50.+v (Electrical properties)