中国物理B ›› 2022, Vol. 31 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/ac464f

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Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs

Shurui Cao(曹书睿)1,2, Ruize Feng(封瑞泽)1,2, Bo Wang(王博)1,3, Tong Liu(刘桐)1,2, Peng Ding(丁芃)1,2,†, and Zhi Jin(金智)1,2,‡   

  1. 1 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100029, China;
    3 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  • 收稿日期:2021-11-08 修回日期:2021-11-08 发布日期:2022-04-27
  • 通讯作者: Peng Ding,E-mail:dingpeng@ime.ac.cn;Zhi Jin,E-mail:jinzhi@ime.ac.cn E-mail:dingpeng@ime.ac.cn;jinzhi@ime.ac.cn
  • 基金资助:
    Project supported by the National Nature Science Foundation of China (Grant No.61434006).

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs

Shurui Cao(曹书睿)1,2, Ruize Feng(封瑞泽)1,2, Bo Wang(王博)1,3, Tong Liu(刘桐)1,2, Peng Ding(丁芃)1,2,†, and Zhi Jin(金智)1,2,‡   

  1. 1 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100029, China;
    3 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  • Received:2021-11-08 Revised:2021-11-08 Published:2022-04-27
  • Contact: Peng Ding,E-mail:dingpeng@ime.ac.cn;Zhi Jin,E-mail:jinzhi@ime.ac.cn E-mail:dingpeng@ime.ac.cn;jinzhi@ime.ac.cn
  • About author:2021-12-24
  • Supported by:
    Project supported by the National Nature Science Foundation of China (Grant No.61434006).

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摘要： A set of 100-nm gate-length InP-based high electron mobility transistors (HEMTs) were designed and fabricated with different gate offsets in gate recess. A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography. DC and RF measurement was conducted. With the gate offset varying from drain side to source side, the maximum drain current (Ids,max) and transconductance (gm,max) increased. In the meantime, fT decreased while fmax increased, and the highest fmax of 1096 GHz was obtained. It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance. Output conductance was also suppressed by gate offset toward source side. This provides simple and flexible device parameter selection for HEMTs of different usages.

关键词: InP HEMT, InGaAs/InAlAs, cut-off frequency (fT), maximum oscillation frequency (fmax), asymmetric gate recess

Abstract: A set of 100-nm gate-length InP-based high electron mobility transistors (HEMTs) were designed and fabricated with different gate offsets in gate recess. A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography. DC and RF measurement was conducted. With the gate offset varying from drain side to source side, the maximum drain current (Ids,max) and transconductance (gm,max) increased. In the meantime, fT decreased while fmax increased, and the highest fmax of 1096 GHz was obtained. It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance. Output conductance was also suppressed by gate offset toward source side. This provides simple and flexible device parameter selection for HEMTs of different usages.

Key words: InP HEMT, InGaAs/InAlAs, cut-off frequency (fT), maximum oscillation frequency (fmax), asymmetric gate recess

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.-z (Semiconductor devices)