High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

doi:10.1088/1674-1056/ac2b21

中国物理B ›› 2022, Vol. 31 ›› Issue (2): 27103-027103.doi: 10.1088/1674-1056/ac2b21

High linearity AlGaN/GaN HEMT with double-V_th coupling for millimeter-wave applications

Pengfei Wang(王鹏飞)¹, Minhan Mi(宓珉瀚)^1,3,†, Meng Zhang(张濛)¹, Jiejie Zhu(祝杰杰)¹, Yuwei Zhou(周雨威)², Jielong Liu(刘捷龙)², Sijia Liu(刘思佳)², Ling Yang(杨凌)¹, Bin Hou(侯斌)¹, Xiaohua Ma(马晓华)¹, and Yue Hao(郝跃)¹

1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3 Xidian University Guangzhou Institute of Technology, Guangzhou 510555, China

收稿日期:2021-07-13 修回日期:2021-09-23 接受日期:2021-09-29 出版日期:2022-01-13 发布日期:2022-01-22
通讯作者: Minhan Mi E-mail:miminhan@qq.com
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2020YFB1804902), the Fundamental Research Funds for the Central Universities, the Innovation Fund of Xidian University, the National Natural Science Foundation of China (Grant No. 61904135), the China Postdoctoral Science Foundation (Grant Nos. 2018M640957 and BX20200262), and the Research and Development Plan of Key Fields in Guangzhou (Grant No. 202103020002).

High linearity AlGaN/GaN HEMT with double-V_th coupling for millimeter-wave applications

1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3 Xidian University Guangzhou Institute of Technology, Guangzhou 510555, China

Received:2021-07-13 Revised:2021-09-23 Accepted:2021-09-29 Online:2022-01-13 Published:2022-01-22
Contact: Minhan Mi E-mail:miminhan@qq.com
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2020YFB1804902), the Fundamental Research Funds for the Central Universities, the Innovation Fund of Xidian University, the National Natural Science Foundation of China (Grant No. 61904135), the China Postdoctoral Science Foundation (Grant Nos. 2018M640957 and BX20200262), and the Research and Development Plan of Key Fields in Guangzhou (Grant No. 202103020002).

摘要/Abstract

摘要： We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-V_th coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage (V_th) values including the slant recess element and planar element in parallel along the gate width with N₂O plasma treatment on the gate region. The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance (G_m) and radio frequency (RF) output signal characteristics in DVC-HEMT. The fabricated device shows the transconductance plateau larger than 7 V, which yields a flattened f_T/f_max-gate bias dependence. At the operating frequency of 30 GHz, the peak power-added efficiency (PAE) of 41% accompanied by the power density (P_out) of 5.3 W/mm. Furthermore, the proposed architecture also features an exceptional linearity performance with 1-dB compression point (P_{1 dB}) of 28 dBm, whereas that of the Fin-like HEMT is 25.2 dBm. The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.

关键词: AlGaN/GaN, linearity, 1-dB compression point, millimeter-wave application

Abstract: We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-V_th coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage (V_th) values including the slant recess element and planar element in parallel along the gate width with N₂O plasma treatment on the gate region. The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance (G_m) and radio frequency (RF) output signal characteristics in DVC-HEMT. The fabricated device shows the transconductance plateau larger than 7 V, which yields a flattened f_T/f_max-gate bias dependence. At the operating frequency of 30 GHz, the peak power-added efficiency (PAE) of 41% accompanied by the power density (P_out) of 5.3 W/mm. Furthermore, the proposed architecture also features an exceptional linearity performance with 1-dB compression point (P_{1 dB}) of 28 dBm, whereas that of the Fin-like HEMT is 25.2 dBm. The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.

Key words: AlGaN/GaN, linearity, 1-dB compression point, millimeter-wave application

中图分类号: (III-V semiconductors)

71.55.Eq

73.20.-r (Electron states at surfaces and interfaces) 73.50.-h (Electronic transport phenomena in thin films)

Pengfei Wang(王鹏飞), Minhan Mi(宓珉瀚), Meng Zhang(张濛), Jiejie Zhu(祝杰杰), Yuwei Zhou(周雨威), Jielong Liu(刘捷龙), Sijia Liu(刘思佳), Ling Yang(杨凌), Bin Hou(侯斌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). High linearity AlGaN/GaN HEMT with double-V_th coupling for millimeter-wave applications[J]. 中国物理B, 2022, 31(2): 27103-027103.

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High linearity AlGaN/GaN HEMT with double-V_th coupling for millimeter-wave applications

High linearity AlGaN/GaN HEMT with double-V_th coupling for millimeter-wave applications

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