Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

doi:10.1088/1674-1056/acbded

中国物理B ›› 2023, Vol. 32 ›› Issue (8): 87301-087301.doi: 10.1088/1674-1056/acbded

Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

Tao Zhang(张涛)¹, Ruo-Han Li(李若晗)², Kai Su(苏凯)¹, Hua-Ke Su(苏华科)¹, Yue-Guang Lv(吕跃广)³, Sheng-Rui Xu(许晟瑞)^1,†, Jin-Cheng Zhang(张进成)^1,‡, and Yue Hao(郝跃)¹

1. Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. Xi'an Microelectronics Technology Institute, Xi'an 710054, China;
3. School of Aerospace Science and Technology, Xidian University, Xi'an 710071, China

收稿日期:2022-10-14 修回日期:2023-02-20 接受日期:2023-02-22 发布日期:2023-07-14
通讯作者: Sheng-Rui Xu, Jin-Cheng Zhang E-mail:srxu@xidian.edu.cn;jchzhang@xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No.62104185), the Fundamental Research Funds for the Central Universities,China (Grant No.JB211103), the National Natural Science Foundation for Distinguished Young Scholars, China (Grant No.61925404), and the Wuhu and Xidian University Special Fund for Industry--University-Research Cooperation, China(Grant No.XWYCXY-012021010).

Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

1. Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. Xi'an Microelectronics Technology Institute, Xi'an 710054, China;
3. School of Aerospace Science and Technology, Xidian University, Xi'an 710071, China

Received:2022-10-14 Revised:2023-02-20 Accepted:2023-02-22 Published:2023-07-14
Contact: Sheng-Rui Xu, Jin-Cheng Zhang E-mail:srxu@xidian.edu.cn;jchzhang@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No.62104185), the Fundamental Research Funds for the Central Universities,China (Grant No.JB211103), the National Natural Science Foundation for Distinguished Young Scholars, China (Grant No.61925404), and the Wuhu and Xidian University Special Fund for Industry--University-Research Cooperation, China(Grant No.XWYCXY-012021010).

摘要/Abstract

摘要： Dynamic characteristics of the single-crystal GaN-passivated lateral AlGaN/GaN Schottky barrier diodes (SBDs) treated with proton irradiation are investigated. Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance (R_ON) are observed under 10-MeV proton irradiation at a fluence of 10¹⁴ cm^-2. Because of the existing negative polarization charges induced at GaN/AlGaN interface, the dynamic ON-resistance (R_ON,dyn) shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons. Furthermore, the normalized R_ON,dyn increases by only 14% that of the initial case after a 100-s-long bias of -600 V has been applied to the irradiated devices. The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.

关键词: AlGaN/GaN SBDs, GaN passivation layer, proton irradiation, dynamic on-resistance

Abstract: Dynamic characteristics of the single-crystal GaN-passivated lateral AlGaN/GaN Schottky barrier diodes (SBDs) treated with proton irradiation are investigated. Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance (R_ON) are observed under 10-MeV proton irradiation at a fluence of 10¹⁴ cm^-2. Because of the existing negative polarization charges induced at GaN/AlGaN interface, the dynamic ON-resistance (R_ON,dyn) shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons. Furthermore, the normalized R_ON,dyn increases by only 14% that of the initial case after a 100-s-long bias of -600 V has been applied to the irradiated devices. The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.

Key words: AlGaN/GaN SBDs, GaN passivation layer, proton irradiation, dynamic on-resistance

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Kk (Junction diodes)

Tao Zhang(张涛), Ruo-Han Li(李若晗), Kai Su(苏凯), Hua-Ke Su(苏华科), Yue-Guang Lv(吕跃广), Sheng-Rui Xu(许晟瑞), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes[J]. 中国物理B, 2023, 32(8): 87301-087301.

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Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

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