Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

doi:10.1088/1674-1056/acc7f4

中国物理B ›› 2023, Vol. 32 ›› Issue (10): 108101-108101.doi: 10.1088/1674-1056/acc7f4

Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

Xuerui Niu(牛雪锐)¹, Bin Hou(侯斌)^1,†, Meng Zhang(张濛)¹, Ling Yang(杨凌)^1,‡, Mei Wu(武玫)¹, Xinchuang Zhang(张新创)², Fuchun Jia(贾富春)¹, Chong Wang(王冲)¹, Xiaohua Ma(马晓华)¹, and Yue Hao(郝跃)¹

1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

收稿日期:2022-09-19 修回日期:2023-02-23 接受日期:2023-03-28 出版日期:2023-09-21 发布日期:2023-10-08
通讯作者: Bin Hou, Ling Yang E-mail:bhou@xidian.edu.cn;yangling@xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62104184, 62234009, 62090014, 62188102, 62104178, and 62104179), the Fundamental Research Funds for the Central Universities of China (Grant Nos. YJSJ23019, XJSJ23047, and ZDRC2002), the China National Postdoctoral Program for Innovative Talents (Grant No. BX20200262), and the China Postdoctoral Science Foundation (Grant No. 2021M692499)

Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

Received:2022-09-19 Revised:2023-02-23 Accepted:2023-03-28 Online:2023-09-21 Published:2023-10-08
Contact: Bin Hou, Ling Yang E-mail:bhou@xidian.edu.cn;yangling@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62104184, 62234009, 62090014, 62188102, 62104178, and 62104179), the Fundamental Research Funds for the Central Universities of China (Grant Nos. YJSJ23019, XJSJ23047, and ZDRC2002), the China National Postdoctoral Program for Innovative Talents (Grant No. BX20200262), and the China Postdoctoral Science Foundation (Grant No. 2021M692499)

摘要/Abstract

摘要： GaN-based p-channel heterostructure field-effect transistors (p-HFETs) face significant constraints on on-state currents compared with n-channel high electron mobility transistors. In this work, we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs. The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations, including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer, as well as the thickness and Mg-doping concentration in the p-GaN insertion layer. With the help of the p-GaN insertion layer, the C-doping concentration in the GaN buffer layer can be reduced, while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time. This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.

关键词: GaN, double-channel heterostructure field-effect transistors, p-GaN insertion layer, C-doped buffer layer

Abstract: GaN-based p-channel heterostructure field-effect transistors (p-HFETs) face significant constraints on on-state currents compared with n-channel high electron mobility transistors. In this work, we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs. The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations, including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer, as well as the thickness and Mg-doping concentration in the p-GaN insertion layer. With the help of the p-GaN insertion layer, the C-doping concentration in the GaN buffer layer can be reduced, while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time. This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.

Key words: GaN, double-channel heterostructure field-effect transistors, p-GaN insertion layer, C-doped buffer layer

中图分类号: (III-V semiconductors)

81.05.Ea

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)

Xuerui Niu(牛雪锐), Bin Hou(侯斌), Meng Zhang(张濛), Ling Yang(杨凌), Mei Wu(武玫), Xinchuang Zhang(张新创), Fuchun Jia(贾富春), Chong Wang(王冲), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer[J]. 中国物理B, 2023, 32(10): 108101-108101.

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Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

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