High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

doi:10.1088/1674-1056/ac1414

中国物理B ›› 2022, Vol. 31 ›› Issue (2): 27301-027301.doi: 10.1088/1674-1056/ac1414

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

Xinchuang Zhang(张新创)¹, Bin Hou(侯斌)², Fuchun Jia(贾富春)², Hao Lu(芦浩)², Xuerui Niu(牛雪锐)², Mei Wu(武玫)², Meng Zhang(张濛)², Jiale Du(杜佳乐)², Ling Yang(杨凌)², Xiaohua Ma(马晓华)^2,†, and Yue Hao(郝跃)²

1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2021-05-07 修回日期:2021-06-23 接受日期:2021-07-14 出版日期:2022-01-13 发布日期:2022-01-13
通讯作者: Xiaohua Ma E-mail:xhma@xidian.edu.cn
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 62090014, 62188102, 62104184, 62104178, and 62104179) and the Fundamental Research Funds for the Central Universities of China (Grant Nos. XJS201102, XJS211101, XJS211106, and ZDRC2002).

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2021-05-07 Revised:2021-06-23 Accepted:2021-07-14 Online:2022-01-13 Published:2022-01-13
Contact: Xiaohua Ma E-mail:xhma@xidian.edu.cn
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 62090014, 62188102, 62104184, 62104178, and 62104179) and the Fundamental Research Funds for the Central Universities of China (Grant Nos. XJS201102, XJS211101, XJS211106, and ZDRC2002).

摘要/Abstract

摘要： An atomic-level controlled etching (ACE) technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with high power added efficiency. We compare the recessed gate HEMTs with conventional etching (CE) based chlorine, Cl₂-only ACE and BCl₃/Cl₂ ACE, respectively. The mixed radicals of BCl₃/Cl₂ were used as the active reactants in the step of chemical modification. For ensuring precise and controllable etching depth and low etching damage, the kinetic energy of argon ions was accurately controlled. These argon ions were used precisely to remove the chemical modified surface atomic layer. Compared to the HEMTs with CE, the characteristics of devices fabricated by ACE are significantly improved, which benefits from significant reduction of etching damage. For BCl₃/Cl₂ ACE recessed HEMTs, the load pull test at 17 GHz shows a high power added efficiency (PAE) of 59.8% with an output power density of 1.6 W/mm at V_d=10 V, and a peak PAE of 44.8% with an output power density of 3.2 W/mm at V_d=20 V in a continuous-wave mode.

关键词: AlGaN/GaN HEMTs, recess etching, low damage, high power added efficiency

Abstract: An atomic-level controlled etching (ACE) technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with high power added efficiency. We compare the recessed gate HEMTs with conventional etching (CE) based chlorine, Cl₂-only ACE and BCl₃/Cl₂ ACE, respectively. The mixed radicals of BCl₃/Cl₂ were used as the active reactants in the step of chemical modification. For ensuring precise and controllable etching depth and low etching damage, the kinetic energy of argon ions was accurately controlled. These argon ions were used precisely to remove the chemical modified surface atomic layer. Compared to the HEMTs with CE, the characteristics of devices fabricated by ACE are significantly improved, which benefits from significant reduction of etching damage. For BCl₃/Cl₂ ACE recessed HEMTs, the load pull test at 17 GHz shows a high power added efficiency (PAE) of 59.8% with an output power density of 1.6 W/mm at V_d=10 V, and a peak PAE of 44.8% with an output power density of 3.2 W/mm at V_d=20 V in a continuous-wave mode.

Key words: AlGaN/GaN HEMTs, recess etching, low damage, high power added efficiency

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

81.05.Ea (III-V semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)

Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching[J]. 中国物理B, 2022, 31(2): 27301-027301.

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High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

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