中国物理B ›› 2022, Vol. 31 ›› Issue (5): 58505-058505.doi: 10.1088/1674-1056/ac2b1f
Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩),Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃)
- State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安)†, Fei-Xiang Shen(申飞翔), Hao Zou(邹浩),Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃)
- State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
摘要： A GaN-based high electron mobility transistor (HEMT) with p-GaN islands buried layer (PIBL) for terahertz applications is proposed. The introduction of a p-GaN island redistributes the electric field in the gate-drain channel region, thereby promoting the formation of electronic domains in the two-dimensional electron gas (2DEG) channel. The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software. Simulation results show that the 0.2 μ m gate HEMT with a PIBL structure having a p-GaN island doping concentration (Np) of 2.5×1018 cm-3-3×1018 cm-3 can generate stable oscillations up to 344 GHz-400 GHz under the gate-source voltage (Vgs) of 0.6 V. As the distance (Dp) between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm, the fundamental frequency decreases from 377 GHz to 344 GHz, as well as the ratio of oscillation current amplitude of the fundamental component to the average component If1/Iavg ranging from 2.4% to 3.84%.
中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))
- 85.30.Mn