Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process

doi:10.1088/1674-1056/ac6013

中国物理B ›› 2022, Vol. 31 ›› Issue (5): 58506-058506.doi: 10.1088/1674-1056/ac6013

Enhancement of f_MAX of InP-based HEMTs by double-recessed offset gate process

Bo Wang(王博)^1,2, Peng Ding(丁芃)², Rui-Ze Feng(封瑞泽)², Shu-Rui Cao(曹书睿)², Hao-Miao Wei(魏浩淼)², Tong Liu(刘桐)², Xiao-Yu Liu(刘晓宇)², Hai-Ou Li(李海鸥)^1,†, and Zhi Jin(金智)^2,‡

1 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
2 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2022-01-15 修回日期:2022-03-11 发布日期:2022-05-05
通讯作者: Hai-Ou Li,E-mail:lihaiou@guet.edu.cn;Zhi Jin,E-mail:jinzhi@ime.ac.cn E-mail:lihaiou@guet.edu.cn;jinzhi@ime.ac.cn
基金资助:
This work is supported by the National Natural Science Foundation of China (Grant Nos.61874036,62174041,and 61434006),the Open Project of State Key Laboratory of ASIC and System (Grant No.KVH1233021),the Opening Foundation of the State Key Laboratory of Advanced Materials and Electronic Components (Grant No.FHR-JS-201909007),the Guangxi Innovation Research Team Project (Grant Nos.2018GXNSFGA281004 and 2018GXNSFBA281152),the Guangxi Innovation Driven Development Special Fund Project (Grant No.AA19254015),and the Guangxi Key Laboratory of Precision Navigation Technology and Application Project (Grant Nos.DH201906,DH202020,and DH202001).

Enhancement of f_MAX of InP-based HEMTs by double-recessed offset gate process

1 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
2 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2022-01-15 Revised:2022-03-11 Published:2022-05-05
Contact: Hai-Ou Li,E-mail:lihaiou@guet.edu.cn;Zhi Jin,E-mail:jinzhi@ime.ac.cn E-mail:lihaiou@guet.edu.cn;jinzhi@ime.ac.cn
About author:2022-3-23
Supported by:
This work is supported by the National Natural Science Foundation of China (Grant Nos.61874036,62174041,and 61434006),the Open Project of State Key Laboratory of ASIC and System (Grant No.KVH1233021),the Opening Foundation of the State Key Laboratory of Advanced Materials and Electronic Components (Grant No.FHR-JS-201909007),the Guangxi Innovation Research Team Project (Grant Nos.2018GXNSFGA281004 and 2018GXNSFBA281152),the Guangxi Innovation Driven Development Special Fund Project (Grant No.AA19254015),and the Guangxi Key Laboratory of Precision Navigation Technology and Application Project (Grant Nos.DH201906,DH202020,and DH202001).

摘要/Abstract

摘要： A double-recessed offset gate process technology for InP-based high electron mobility transistors (HEMTs) has been developed in this paper. Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized. Compared with single-recessed devices, the maximum drain-source current (I_D,max) and maximum extrinsic transconductance (g_m,max) of double-recessed devices decreased due to the increase in series resistances. However, in terms of RF performance, double-recessed HEMTs achieved higher maximum oscillation frequency (f_MAX) by reducing drain output conductance (g_ds) and drain to gate capacitance (C_gd). In addition, further improvement of f_MAX was observed by adjusting the gate offset of double-recessed devices. This can be explained by suppressing the ratio of C_gd to source to gate capacitance (C_gs) by extending drain-side recess length (L_rd). Compared with the single-recessed HEMTs, the f_MAX of double-recessed offset gate HEMTs was increased by about 20%.

关键词: InP, HEMT, maximum oscillation frequency (f_MAX), double-recess, offset gate

Abstract: A double-recessed offset gate process technology for InP-based high electron mobility transistors (HEMTs) has been developed in this paper. Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized. Compared with single-recessed devices, the maximum drain-source current (I_D,max) and maximum extrinsic transconductance (g_m,max) of double-recessed devices decreased due to the increase in series resistances. However, in terms of RF performance, double-recessed HEMTs achieved higher maximum oscillation frequency (f_MAX) by reducing drain output conductance (g_ds) and drain to gate capacitance (C_gd). In addition, further improvement of f_MAX was observed by adjusting the gate offset of double-recessed devices. This can be explained by suppressing the ratio of C_gd to source to gate capacitance (C_gs) by extending drain-side recess length (L_rd). Compared with the single-recessed HEMTs, the f_MAX of double-recessed offset gate HEMTs was increased by about 20%.

Key words: InP, HEMT, maximum oscillation frequency (f_MAX), double-recess, offset gate

中图分类号: (Field effect devices)

85.30.Tv

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.-z (Semiconductor devices)

Bo Wang(王博), Peng Ding(丁芃), Rui-Ze Feng(封瑞泽), Shu-Rui Cao(曹书睿), Hao-Miao Wei(魏浩淼), Tong Liu(刘桐), Xiao-Yu Liu(刘晓宇), Hai-Ou Li(李海鸥), and Zhi Jin(金智). Enhancement of f_MAX of InP-based HEMTs by double-recessed offset gate process[J]. 中国物理B, 2022, 31(5): 58506-058506.

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Enhancement of f_MAX of InP-based HEMTs by double-recessed offset gate process

Enhancement of f_MAX of InP-based HEMTs by double-recessed offset gate process

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