中国物理B ›› 2023, Vol. 32 ›› Issue (3): 37201-037201.doi: 10.1088/1674-1056/ac8735

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Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

Xin Jiang(蒋鑫)1,2, Chen-Hao Li(李晨浩)1,2, Shuo-Xiong Yang(羊硕雄)2, Jia-Hao Liang(梁家豪)2, Long-Kun Lai(来龙坤)1,2, Qing-Yang Dong(董青杨)1,2, Wei Huang(黄威)2, Xin-Yu Liu(刘新宇)1,2,†, and Wei-Jun Luo(罗卫军)1,2,‡   

  1. 1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2022-06-01 修回日期:2022-07-11 接受日期:2022-08-05 出版日期:2023-02-14 发布日期:2023-02-14
  • 通讯作者: Xin-Yu Liu, Wei-Jun Luo E-mail:xyliu@ime.ac.cn;luoweijun@ime.ac.cn

Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

Xin Jiang(蒋鑫)1,2, Chen-Hao Li(李晨浩)1,2, Shuo-Xiong Yang(羊硕雄)2, Jia-Hao Liang(梁家豪)2, Long-Kun Lai(来龙坤)1,2, Qing-Yang Dong(董青杨)1,2, Wei Huang(黄威)2, Xin-Yu Liu(刘新宇)1,2,†, and Wei-Jun Luo(罗卫军)1,2,‡   

  1. 1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100190, China
  • Received:2022-06-01 Revised:2022-07-11 Accepted:2022-08-05 Online:2023-02-14 Published:2023-02-14
  • Contact: Xin-Yu Liu, Wei-Jun Luo E-mail:xyliu@ime.ac.cn;luoweijun@ime.ac.cn

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摘要： The reverse gate leakage mechanism of W-gate and TiN-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with N2 plasma surface treatment is investigated using current-voltage (I-V) and capacitance-voltage (C-V) characteristics and theoretical calculation analysis. It is found that the main reverse gate leakage mechanism of both devices is the trap-assisted tunneling (TAT) mechanism in the entire reverse bias region (-30 V to 0 V). It is also found that the reverse gate leakage current of the W-gate AlGaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage. Moreover, the activation energies of the extracted W-gate and TiN-gate AlGaN/GaN HEMTs are 0.0551 eV-0.127 eV and 0.112 eV-0.201 eV, respectively.

关键词: AlGaN/GaN, trap-assisted tunneling (TAT), W gate, TiN gate

Abstract: The reverse gate leakage mechanism of W-gate and TiN-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with N2 plasma surface treatment is investigated using current-voltage (I-V) and capacitance-voltage (C-V) characteristics and theoretical calculation analysis. It is found that the main reverse gate leakage mechanism of both devices is the trap-assisted tunneling (TAT) mechanism in the entire reverse bias region (-30 V to 0 V). It is also found that the reverse gate leakage current of the W-gate AlGaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage. Moreover, the activation energies of the extracted W-gate and TiN-gate AlGaN/GaN HEMTs are 0.0551 eV-0.127 eV and 0.112 eV-0.201 eV, respectively.

Key words: AlGaN/GaN, trap-assisted tunneling (TAT), W gate, TiN gate

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.-z (Semiconductor devices) 73.20.-r (Electron states at surfaces and interfaces)