中国物理B ›› 2023, Vol. 32 ›› Issue (6): 67305-067305.doi: 10.1088/1674-1056/acaa27
Research on self-supporting T-shaped gate structure of GaN-based HEMT devices
Peng Zhang(张鹏)1,†, Miao Li(李苗)2, Jun-Wen Chen(陈俊文)2, Jia-Zhi Liu(刘加志)2, and Xiao-Hua Ma(马晓华)1
- 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advance Material and Nanotechnology, Xidian University, Xi'an 710071, China
Research on self-supporting T-shaped gate structure of GaN-based HEMT devices
Peng Zhang(张鹏)1,†, Miao Li(李苗)2, Jun-Wen Chen(陈俊文)2, Jia-Zhi Liu(刘加志)2, and Xiao-Hua Ma(马晓华)1
- 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advance Material and Nanotechnology, Xidian University, Xi'an 710071, China
摘要： A self-supporting T-shaped gate (SST-gate) GaN device and process method using electron beam lithography are proposed. An AlGaN/GaN high-electron-mobility transistor (HEMT) device with a gate length of 100 nm is fabricated by this method. The current gain cutoff frequency ($f_{\rm T})$ is 60 GHz, and the maximum oscillation frequency ($f_{\rm max})$ is 104 GHz. The current collapse has improved by 13% at static bias of ($V_{\rm GSQ}$, $V_{\rm DSQ}) = (-8 {\rm V}, 10 {\rm V})$, and gate manufacturing yield has improved by 17% compared with the traditional floating T-shaped gate (FT-gate) device.
中图分类号: (III-V semiconductors)
- 73.61.Ey