中国物理B ›› 2022, Vol. 31 ›› Issue (4): 47303-047303.doi: 10.1088/1674-1056/ac2b1d

• • 上一篇    下一篇

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

Shi-Yu Feng(冯识谕)1,2, Yong-Bo Su(苏永波)1,2, Peng Ding(丁芃)1,2, Jing-Tao Zhou(周静涛)1,2, Song-Ang Peng(彭松昂)1,2, Wu-Chang Ding(丁武昌)1,2,†, and Zhi Jin(金智)1,2   

  1. 1 University of Chinese Academic of Sciences, Beijing 100029, China;
    2 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2021-07-13 修回日期:2021-09-24 接受日期:2021-09-29 出版日期:2022-03-16 发布日期:2022-03-29
  • 通讯作者: Wu-Chang Ding E-mail:dingwuchang@ime.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61434006 and 61704189) and the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

Shi-Yu Feng(冯识谕)1,2, Yong-Bo Su(苏永波)1,2, Peng Ding(丁芃)1,2, Jing-Tao Zhou(周静涛)1,2, Song-Ang Peng(彭松昂)1,2, Wu-Chang Ding(丁武昌)1,2,†, and Zhi Jin(金智)1,2   

  1. 1 University of Chinese Academic of Sciences, Beijing 100029, China;
    2 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2021-07-13 Revised:2021-09-24 Accepted:2021-09-29 Online:2022-03-16 Published:2022-03-29
  • Contact: Wu-Chang Ding E-mail:dingwuchang@ime.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61434006 and 61704189) and the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

RichHTML

0

PDF (PC)

169

赞

摘要： With the widespread utilization of indium-phosphide-based high-electron-mobility transistors (InP HEMTs) in the millimeter-wave (mmW) band, the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent. We present an InP HEMT extrinsic parasitic equivalent circuit, in which the conductance between the device electrodes and a new gate-drain mutual inductance term Lmgd are taken into account for the high-frequency magnetic field coupling between device electrodes. Based on the suggested parasitic equivalent circuit, through HFSS and advanced design system (ADS) co-simulation, the equivalent circuit parameters are directly extracted in the multi-step system. The HFSS simulation prediction, measurement data, and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit. The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

关键词: extrinsic equivalent circuit modeling, InP HEMT, HFSS and ADS co-simulation, S-parameters

Abstract: With the widespread utilization of indium-phosphide-based high-electron-mobility transistors (InP HEMTs) in the millimeter-wave (mmW) band, the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent. We present an InP HEMT extrinsic parasitic equivalent circuit, in which the conductance between the device electrodes and a new gate-drain mutual inductance term Lmgd are taken into account for the high-frequency magnetic field coupling between device electrodes. Based on the suggested parasitic equivalent circuit, through HFSS and advanced design system (ADS) co-simulation, the equivalent circuit parameters are directly extracted in the multi-step system. The HFSS simulation prediction, measurement data, and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit. The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

Key words: extrinsic equivalent circuit modeling, InP HEMT, HFSS and ADS co-simulation, S-parameters

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.De (Semiconductor-device characterization, design, and modeling) 07.05.Tp (Computer modeling and simulation)