Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

doi:10.1088/1674-1056/ace248

中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98506-098506.doi: 10.1088/1674-1056/ace248

Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉)^†, and Bo Zhang(张波)

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2023-02-25 修回日期:2023-05-22 接受日期:2023-06-28 发布日期:2023-09-07
通讯作者: Xiaorong Luo E-mail:xrluo@uestc.edu.cn
基金资助:
Project supported by the National Natural Science Foundations of China (Grant Nos. 61874149 and U20A20208) and the Outstanding Youth Science and Technology Foundation of China (Grant No. 2018-JCJQ-ZQ-060).

Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉)^†, and Bo Zhang(张波)

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2023-02-25 Revised:2023-05-22 Accepted:2023-06-28 Published:2023-09-07
Contact: Xiaorong Luo E-mail:xrluo@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundations of China (Grant Nos. 61874149 and U20A20208) and the Outstanding Youth Science and Technology Foundation of China (Grant No. 2018-JCJQ-ZQ-060).

摘要/Abstract

摘要： A novel normally-off double channel reverse conducting (DCRC) HEMT with an integrated MOS-channel diode (MCD) is proposed and investigated by TCAD simulation. The proposed structure has two features: one is double heterojunctions to form dual 2DEG channels named the 1^st path and the 2^nd path for reverse conduction, and the other is the MCD forming by the trench source metal, source dielectric, and GaN. At the initial reverse conduction stage, the MCD acts as a switch to control the 1^st path which would be turned on prior to the 2^nd path. Because of the introduction of the 1^st path, the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance. Compared with the conventional HEMT (Conv. HEMT), the DCRC-HEMT can obtain a low reverse turn-on voltage (V_RT) and its V_RT is independent of the gate-source bias (V_GS) at the same time. The DCRC-HEMT achieves the V_RT of 0.62 V, which is 59.7% and 75.9% lower than that of the Conv. HEMT at V_GS = 0 V and -1 V, respectively. In addition, the forward conduction capability and blocking characteristics almost remain unchanged. In the end, the key fabrication flows of DCRC-HEMT are presented.

关键词: AlGaN/GaN, HEMT, double-channel, reverse conduction

Abstract: A novel normally-off double channel reverse conducting (DCRC) HEMT with an integrated MOS-channel diode (MCD) is proposed and investigated by TCAD simulation. The proposed structure has two features: one is double heterojunctions to form dual 2DEG channels named the 1^st path and the 2^nd path for reverse conduction, and the other is the MCD forming by the trench source metal, source dielectric, and GaN. At the initial reverse conduction stage, the MCD acts as a switch to control the 1^st path which would be turned on prior to the 2^nd path. Because of the introduction of the 1^st path, the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance. Compared with the conventional HEMT (Conv. HEMT), the DCRC-HEMT can obtain a low reverse turn-on voltage (V_RT) and its V_RT is independent of the gate-source bias (V_GS) at the same time. The DCRC-HEMT achieves the V_RT of 0.62 V, which is 59.7% and 75.9% lower than that of the Conv. HEMT at V_GS = 0 V and -1 V, respectively. In addition, the forward conduction capability and blocking characteristics almost remain unchanged. In the end, the key fabrication flows of DCRC-HEMT are presented.

Key words: AlGaN/GaN, HEMT, double-channel, reverse conduction

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Tv (Field effect devices) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 51.50.+v (Electrical properties)

Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波). Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode[J]. 中国物理B, 2023, 32(9): 98506-098506.

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Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

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