中国物理B ›› 2013, Vol. 22 ›› Issue (2): 26102-026102.doi: 10.1088/1674-1056/22/2/026102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

严启荣, 闫其昂, 石培培, 牛巧利, 李述体, 章勇   

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2012-06-19 修回日期:2012-07-27 出版日期:2013-01-01 发布日期:2013-01-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. U1174001); the Ministry of Education Scientific Research Foundation for Returned Scholars, China (Grant No. 20091001); the Scientific and Technological Plan of Guangzhou City, China (Grant No. 2010U1-D00131); and the Natural Science Foundation of Guangdong Province, China (Grant No. S2011010003400).

Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇)   

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2012-06-19 Revised:2012-07-27 Online:2013-01-01 Published:2013-01-01
  • Contact: Zhang Yong E-mail:zycq@scnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. U1174001); the Ministry of Education Scientific Research Foundation for Returned Scholars, China (Grant No. 20091001); the Scientific and Technological Plan of Guangzhou City, China (Grant No. 2010U1-D00131); and the Natural Science Foundation of Guangdong Province, China (Grant No. S2011010003400).

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摘要： Strain-compensated InGaN quantum well (QW) active region employing tensile AlGaN barrier is analyzed. Its spectral stability and efficiency droop for dual-blue light-emitting diode (LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LED based on stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate. It is found that the optimal performance is achieved when the Al composition of strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW. The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW that can provide a better carrier confinement and effectively reduce leakage current.

关键词: InGaN-AlGaN/GaN quantum well, InGaN/GaN quantum well, spectral stability, dual-blue light-emitting diode

Abstract: Strain-compensated InGaN quantum well (QW) active region employing tensile AlGaN barrier is analyzed. Its spectral stability and efficiency droop for dual-blue light-emitting diode (LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LED based on stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate. It is found that the optimal performance is achieved when the Al composition of strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW. The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW that can provide a better carrier confinement and effectively reduce leakage current.

Key words: InGaN-AlGaN/GaN quantum well, InGaN/GaN quantum well, spectral stability, dual-blue light-emitting diode

中图分类号:  (III-V and II-VI semiconductors)

  • 61.72.uj
68.55.ag (Semiconductors) 78.67.De (Quantum wells) 85.60.Jb (Light-emitting devices)