Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

doi:10.1088/1674-1056/ab96a2

Abstract Inhomogeneous electroluminescence (EL) of InGaN green LEDs grown on mesh-patterned Si (111) substrate had been investigated. Sample with n-AlGaN inserted between the pre-strained layers and the first quantum well showed the inhomogeneous EL in the low current density range. Near-field EL emission intensity distribution images depicted that inhomogeneity in the form of premature turn-on at the periphery of the LED chip, results in stronger emission intensity at the edges. This premature turn-on effect significantly reduces the luminous efficacy and higher ideality factor value due to locally current crowding effect. Raman measurement and fluorescence microscopy results indicated that the partially relaxed in-plane stress at the edge of the window region acts as a parasitic diode with a smaller energy band gap, which is a source of edge emission. Numerical simulations showd that the tilted triangular n-AlGaN functions like a forward-biased Schottky diode, which not only impedes carrier transport, but also contributes a certain ideality factor.

Keywords: GaN on silicon edge emission n-AlGaN InGaN green LED

Received: 07 March 2020
Revised: 07 April 2020
Accepted manuscript online:

PACS:	78.60.Fi	(Electroluminescence)
	85.30.-z	(Semiconductor devices)
	81.05.Ea	(III-V semiconductors)

Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403105 and 2017YFB0403100) and the National Natural Science Foundation of China (Grant Nos. 11674147, 61604066, 51602141, and 11604137).

Corresponding Authors: Chang-Da Zheng
E-mail: zhengchangda@ncu.edu.cn

Cite this article:

Quan-Jiang Lv(吕全江), Yi-Hong Zhang(张一鸿), Chang-Da Zheng(郑畅达), Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Jun-Lin Liu(刘军林) Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer 2020 Chin. Phys. B 29 087801

[1]	Dadgar A 2015 Phys. Status Solidi 252 1063
[2]	Chen K J, Haberlen O, Lidow A, Tsai C l, Ueda T, Uemoto Y and Wu Y 2017 IEEE Trans. Electron Dev. 64 779
[3]	Jiang F, Zhang J, Xu L, Ding J, Wang G, Wu X, Wang X, Mo C, Quan Z, Guo X, Zheng C, Pan S and Liu J 2019 Photon. Res. 7 144
[4]	Liu J L, Zhang J L, Wang G X, Mo C L, Xu L Q, Ding J, Quan Z J, Wang X L, Pan S, Zheng C D, Wu X M, Fang W Q and Jiang F Y 2015 Chin. Phys. B 24 67804
[5]	Raghavan S, Weng X, Dickey E and Redwing J M 2005 Appl. Phys. Lett. 87 142101
[6]	Feltin E, Beaumont B, Laügt M, De Mierry P, Vennégués P, Leroux M and Gibart P 2001 Phys. Status Solidi (a) 188 531
[7]	Sun Y, Zhou K, Feng M, Li Z, Zhou Y, Sun Q, Liu J, Zhang L, Li D, Sun X, Li D, Zhang S, Ikeda M and Yang H 2018 Light Sci. Appl. 7 13
[8]	Chen C H, Yeh C M, Hwang J, Tsai T L, Chiang C H, Chang C S and Chen T P 2005 J. Appl. Phys. 98 093509
[9]	Cheng K, Leys M, Degroote S, Van Daele B, Boeykens S, Derluyn J, Germain M, Van Tendeloo G, Engelen J and Borghs G 2006 J. Electron. Mater. 35 592
[10]	Lin Y, Zhou S, Wang W, Yang W, Qian H, Wang H, Lin Z, Liu Z, Zhu Y and Li G 2015 J. Mater. Chem. C 3 1484
[11]	Zamir S, Meyler B and Salzman J 2001 Appl. Phys. Lett. 78 288
[12]	Krost A and Dadgar A 2002 Materials Science and Engineering B-Solid State Materials for Advanced Technology 93 77
[13]	Liu J L, Zhang J L, Wang G X, Mo C L, Xu L Q, Ding J, Quan Z J, Wang X L, Pan S, Zheng C D, Wu X M, Fang W Q and Jiang F Y 2015 Chin. Phys. B 24 067804
[14]	Jiang F Y, Liu J L, Wang L, Xiong C B, Fang W Q, Mo C L, Tang Y W, Wang G X, Xu L Q, Ding J, Wang X L, Quan Z J, Zhang J L, Zhang M, Pan S and Zheng C D 2015 Scientia Sinica Physica, Mechanica & Astronomica 45 067302
[15]	Liu H F, Dolmanan S B, Zhang L, Chua S J, Chi D Z, Heuken M and Tripathy S 2013 J. Appl. Phys. 113 023510
[16]	Liu J, Feng F, Zhou Y, Zhang J and Jiang F 2011 Appl. Phys. Lett. 99 111112
[17]	Zhang Y, Lv Q, Zheng C, Gao J, Zhang J and Liu J 2019 Superlattices and Microstructures 136 106284
[18]	Lin R M, Lai M, Chang L B and Huang C H 2010 Appl. Phys. Lett. 97 181108
[19]	Ding B B Z F, Song J J, Xiong J Y, Zheng S W, Zhang Y Y, Xu Y Q, Zhou D T, Yu X P, Zhang H X, Zhang T and Fan G H 2013 Chin. Phys. B 22 088503
[20]	Lee M, Lee H U, Song K M and Kim J 2019 Sci. Rep. 9 970
[21]	Liu W, Zhao D, Jiang D, Chen P, Liu Z, Zhu J, Li X, Liang F, Liu J, Zhang L, Yang H, Zhang Y and Du G 2016 J. Phys. D:Appl. Phys. 49 145104
[22]	Lv Q, Gao J, Tao X, Zhang J, Mo C, Wang X, Zheng C and Liu J 2020 J. Lumin. 222 117186
[23]	Tripathy S, Chua S J, Chen P and Miao Z L 2002 J. Appl. Phys. 92 3503
[24]	Zoellner M H, Chahine G A, Lahourcade L, Mounir C, Manganelli C L, Schülli T U, Schwarz U T, Zeisel R and Schroeder T 2019 ACS Appl. Mater. & Inter. 11 22834
[25]	Zhu D, Xu J, Noemaun A N, Kim J K, Schubert E F, Crawford M H and Koleske D D 2009 Appl. Phys. Lett. 94 081113
[26]	Lv Q, Liu J, Mo C, Zhang J, Wu X, Wu Q and Jiang F 2018 ACS Photon. 6 130
[27]	Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T and Park Y 2008 Appl. Phys. Lett. 93 041102

[1]	Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers Cheng Zhang(张诚), Hui-Qing Sun(孙慧卿), Xu-Na Li(李旭娜), Hao Sun(孙浩), Xuan-Cong Fan(范宣聪), Zhu-Ding Zhang(张柱定), Zhi-You Guo(郭志友). Chin. Phys. B, 2016, 25(2): 028501.
[2]	Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer Ding Bin-Bin (丁彬彬), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Xiong Jian-Yong (熊建勇), Zheng Shu-Wen (郑树文), Zhang Yun-Yan (张运炎), Xu Yi-Qin (许毅钦), Zhou De-Tao (周德涛), Yu Xiao-Peng (喻晓鹏), Zhang Han-Xiang (张瀚翔), Zhang Tao (张涛), Fan Guang-Han (范广涵). Chin. Phys. B, 2013, 22(8): 088503.
[3]	Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇). Chin. Phys. B, 2013, 22(2): 026102.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

Cite this article:

Online attention