Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

doi:10.1088/1674-1056/22/2/026102

Abstract Strain-compensated InGaN quantum well (QW) active region employing tensile AlGaN barrier is analyzed. Its spectral stability and efficiency droop for dual-blue light-emitting diode (LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LED based on stacking structure of two In_0.18Ga_0.82N/GaN QWs and two In_0.12Ga_0.88N/GaN QWs on the same sapphire substrate. It is found that the optimal performance is achieved when the Al composition of strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW. The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW that can provide a better carrier confinement and effectively reduce leakage current.

Keywords: InGaN-AlGaN/GaN quantum well InGaN/GaN quantum well spectral stability dual-blue light-emitting diode

Received: 19 June 2012
Revised: 27 July 2012
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	68.55.ag	(Semiconductors)
	78.67.De	(Quantum wells)
	85.60.Jb	(Light-emitting devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. U1174001); the Ministry of Education Scientific Research Foundation for Returned Scholars, China (Grant No. 20091001); the Scientific and Technological Plan of Guangzhou City, China (Grant No. 2010U1-D00131); and the Natural Science Foundation of Guangdong Province, China (Grant No. S2011010003400).

Corresponding Authors: Zhang Yong
E-mail: zycq@scnu.edu.cn

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Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇) Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells 2013 Chin. Phys. B 22 026102

[1]	Schubert E F and Kim J K 2005 Science 308 1274
[2]	Pimputkar S, Speck J S, Denbaars S P and Nakamura S 2009 Nat. Photonics 3 180
[3]	Zukauskas A, Vaicekauskas R, Ivanauskas F, Gaska R and Shur M S 2002 Appl. Phys. Lett. 80 234
[4]	Wang J X, Wang L, Zhao W, Hao Z B and Luo Y 2010 Appl. Phys. Lett. 97 201112
[5]	Kim M H, Schubert M F, Dai Q, Kim J K and Schubert E F 2007 Appl. Phys. Lett. 91 183507
[6]	Kuo Y K, Yen S H, Tsai M C and Liou B T 2007 Proc. SPIE 6669 66691I-1
[7]	Lee W, Kim M H, Zhu D, Noemaun A N, Kim J K and Schubert E F 2010 J. Appl. Phys. 107 063102
[8]	Arif R A, Ee Y K and Tansu N 2007 Appl. Phys. Lett. 91 091110
[9]	Park J and Kawakami Y 2006 Appl. Phys. Lett. 88 202107
[10]	Park S H, Park J and Yoon E 2007 Appl. Phys. Lett. 90 023508
[11]	Arif R A, Zhao H and Tansu N 2008 Appl. Phys. Lett. 92 011104
[12]	Zhao H, Liu G and Tansu N 2010 Appl. Phys. Lett. 97 131114
[13]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 108504
[14]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 098503
[15]	Zhao H, Arif R A, Ee Y K and Tansu N 2007 Optical and Quantum Electronics 39 12
[16]	Zhao H, Arif R A, Ee Y K and Tansu N 2008 Proc. SPIE 6889 688903
[17]	Tsai C L, Liu G S, Lee Y S and Fan G C 2010 J Electrochem. Soc. 157 H260
[18]	Chen X W, Zhang Y, Li S T, Yan Q R, Zheng S W, He M and Fan G H 2011 Phys. Status Solidi A 208 1972
[19]	Yan Q R, Zhang Y, Li S T, Yan Q A, Shi P P, Niu Q L, He M, Li G P and Li J R 2012 Opt. Lett. 37 1556
[20]	APSYS by Crosslight Software Inc. Burnaby Canada (http://www.crosslight.com)
[21]	Kuo Y K, Chang J Y, Tsai M C and Yen S H 2009 Appl. Phys. Lett. 95 011116
[22]	Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675

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Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

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