Surface passivation in n-type silicon and its application insilicon drift detector

doi:10.1088/1674-1056/ab695e

Abstract Based on the surface passivation of n-type silicon in a silicon drift detector (SDD), we propose a new passivation structure of SiO₂/Al₂O₃/SiO₂ passivation stacks. Since the SiO₂ formed by the nitric-acid-oxidation-of-silicon (NAOS) method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al₂O₃ film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO₂ film is deposited by plasma enhanced chemical vapor deposition (PECVD). The deposition of the SiO₂ film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO₂ film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate. The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO₂/Al₂O₃/SiO₂, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.

Keywords: SiO₂/Al₂O₃/SiO₂ stacks chemical passivation field passivation silicon drift detector

Received: 12 October 2019
Revised: 20 December 2019
Accepted manuscript online:

PACS:	77.55.-g	(Dielectric thin films)
	77.22.-d	(Dielectric properties of solids and liquids)
	77.22.-d	(Dielectric properties of solids and liquids)
	85.40.-e	(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51602340, 51702355, and 61674167), the Natural Science Foundation of Beijing Municipality of China (Grant No. 4192064), the National Key Research Program of China (Grant Nos. 2018YFB1500500 and 2018YFB1500200), and the JKW Project of China (Grant No. 31512060106).

Corresponding Authors: Ke Tao, Rui Jia
E-mail: taoke@ime.ac.cn;imesolar@126.com

Cite this article:

Yiqing Wu(吴怡清), Ke Tao(陶科), Shuai Jiang(姜帅), Rui Jia(贾锐), Ye Huang(黄也) Surface passivation in n-type silicon and its application insilicon drift detector 2020 Chin. Phys. B 29 037702

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