Atomic crystals resistive switching memory

doi:10.1088/1674-1056/26/3/033201

Abstract

Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F² cell size, switching in sub-nanosecond, cycling endurances of over 10¹² cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory.

Keywords: atomic crystals two-dimensional materials resistive switching memory

Received: 12 September 2016
Revised: 29 October 2016
Accepted manuscript online:

PACS:	32.90.+a	(Other topics in atomic properties and interactions of atoms with photons)
	51.50.+v	(Electrical properties)
	63.22.Np	(Layered systems)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61376093 and 61622401) and the National Key Research and Development Program of China (Grant No. 2016YFA0203900).

Corresponding Authors: Peng Zhou
E-mail: pengzhou@fudan.edu.cn

Cite this article:

Chunsen Liu(刘春森), David Wei Zhang(张卫), Peng Zhou(周鹏) Atomic crystals resistive switching memory 2017 Chin. Phys. B 26 033201

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