Effect of helium implantation on SiC and graphite

doi:10.1088/1674-1056/24/3/037803

Abstract Effects of helium implantation on silicon carbide (SiC) and graphite were studied to reveal the possibility of SiC replacing graphite as plasma facing materials. Pressureless sintered SiC and graphite SMF-800 were implanted with He⁺ ions of 20 keV and 100 keV at different temperatures and different fluences. The He⁺ irradiation induced microstructure changes were studied by field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM).

Keywords: plasma facing materials SiC irradiation damage fusion reactor

Received: 06 December 2014
Revised: 19 December 2014
Accepted manuscript online:

PACS:	78.70.-g	(Interactions of particles and radiation with matter)
	78.90.+t	(Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter)
	21.90.+f	(Other topics in nuclear structure)

Fund: Project supported by the ITER-National Magnetic Confinement Fusion Program, China (Grant Nos. 2010GB109000, 2011GB108009, and 2014GB123000) and the National Natural Science Foundation of China (Grant No. 11075119).{These authors contributed equally to this work.

Corresponding Authors: Ge Chang-Chun, Xia Min
E-mail: ccge@mater.ustb.edu.cn;xmdsg@126.com

Cite this article:

Guo Hong-Yan (郭洪燕), Ge Chang-Chun (葛昌纯), Xia Min (夏敏), Guo Li-Ping (郭立平), Chen Ji-Hong (陈济鸿), Yan Qing-Zhi (燕青芝) Effect of helium implantation on SiC and graphite 2015 Chin. Phys. B 24 037803

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