Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

doi:10.1088/1674-1056/23/5/058501

Abstract Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al₂O₃ on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.

Keywords: organic memory resistance switching copper phthalocyanine

Received: 13 August 2013
Revised: 06 November 2013
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Sx	(Metal-semiconductor-metal structures)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50971080, 11174183, and 50901043), the Program for New Century Excellent Talents of China (Grant No. NCET-10-0541), the Scientific Research Foundation for Returned Overseas Chinese Scholars, 111 Project (Grant No. B13029), the Natural Science Foundation of Shandong Province, China (Grant No. JQ201201), the Doctorate Foundation of Shandong Province, China (Grant No. BS2013CL042), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11204164).

Corresponding Authors: Kang Shi-Shou
E-mail: skang@sdu.edu.cn

About author: 85.30.De; 73.40.Sx; 73.50.Gr

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Qiao Shi-Zhu (乔士柱), Kang Shi-Shou (康仕寿), Qin Yu-Feng (秦羽丰), Li Qiang (李强), Zhong Hai (钟海), Kang Yun (康韵), Yu Shu-Yun (于淑云), Han Guang-Bing (韩广兵), Yan Shi-Shen (颜世申), Mei Liang-Mo (梅良模) Multi-polar resistance switching and memory effect in copper phthalocyanine junctions 2014 Chin. Phys. B 23 058501

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