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CN 11-5639/O4
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Other articles related with "73.40.Sx":
27303 Jin-Lan Li, Yun Li, Ling Wang, Yue Xu, Feng Yan, Ping Han, Xiao-Li Ji
  Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
    Chin. Phys. B   2019 Vol.28 (2): 27303-027303 [Abstract] (133) [HTML 1 KB] [PDF 929 KB] (127)
107202 Xian-Rong Gu, Li-Dan Guo, Xiang-Nan Sun
  Recent spinterfacial studies targeted to spin manipulation in molecular spintronic devices
    Chin. Phys. B   2018 Vol.27 (10): 107202-107202 [Abstract] (157) [HTML 1 KB] [PDF 3526 KB] (193)
87304 Xin Ye, Xiao-Chuan Xia, Hong-Wei Liang, Zhuo Li, He-Qiu Zhang, Guo-Tong Du, Xing-Zhu Cui, Xiao-Hua Liang
  Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection
    Chin. Phys. B   2018 Vol.27 (8): 87304-087304 [Abstract] (106) [HTML 0 KB] [PDF 735 KB] (75)
67301 Shu-Juan Cui, Zeng-Xia Mei, Yao-Nan Hou, Quan-Sheng Chen, Hui-Li Liang, Yong-Hui Zhang, Wen-Xing Huo, Xiao-Long Du
  Enhanced photoresponse performance in Ga/Ga2O3 nanocomposite solar-blind ultraviolet photodetectors
    Chin. Phys. B   2018 Vol.27 (6): 67301-067301 [Abstract] (107) [HTML 1 KB] [PDF 2796 KB] (137)
27104 Hao-Nan Liu, Xiao-Xia Suo, Lin-Ao Zhang, Duan Zhang, Han-Chun Wu, Hong-Kang Zhao, Zhao-Tan Jiang, Ying-Lan Li, Zhi Wang
  Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures
    Chin. Phys. B   2018 Vol.27 (2): 27104-027104 [Abstract] (182) [HTML 0 KB] [PDF 5217 KB] (172)
127303 Han-Lu Ma, Zhong-Qiang Wang, Hai-Yang Xu, Lei Zhang, Xiao-Ning Zhao, Man-Shu Han, Jian-Gang Ma, Yi-Chun Liu
  Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
    Chin. Phys. B   2016 Vol.25 (12): 127303-127303 [Abstract] (188) [HTML 1 KB] [PDF 985 KB] (218)
47102 Qing-Wen Song, Xiao-Yan Tang, Hao Yuan, Yue-Hu Wang, Yi-Meng Zhang, Hui Guo, Ren-Xu Jia, Hong-Liang Lv, Yi-Men Zhang, Yu-Ming Zhang
  Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs
    Chin. Phys. B   2016 Vol.25 (4): 47102-047102 [Abstract] (248) [HTML 1 KB] [PDF 5205 KB] (282)
107307 Wang Shuan-Hu, Zhang Xu,Zou Lv-Kuan, Zhao Jing, Wang Wen-Xin, Sun Ji-Rong
  Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction
    Chin. Phys. B   2015 Vol.24 (10): 107307-107307 [Abstract] (152) [HTML 1 KB] [PDF 580 KB] (247)
77305 Wang Hao, Chen Xing, Xu Guang-Hui, Huang Ka-Ma
  A novel physical parameter extraction approach for Schottky diodes
    Chin. Phys. B   2015 Vol.24 (7): 77305-077305 [Abstract] (194) [HTML 1 KB] [PDF 378 KB] (485)
77306 Wei Jiang-Bin, Chi Xiao-Wei, Lu Chao, Wang Chen, Lin Guang-Yang, Wu Huan-Da, Huang Wei, Li Cheng, Chen Song-Yan, Liu Chun-Li
  Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride
    Chin. Phys. B   2015 Vol.24 (7): 77306-077306 [Abstract] (281) [HTML 1 KB] [PDF 340 KB] (295)
68101 Heng Hang, Yang Li
  Near field enhancement and absorption properties of the double cylindrical microcavities based on triple-band metamaterial absorber
    Chin. Phys. B   2014 Vol.23 (6): 68101-068101 [Abstract] (139) [HTML 1 KB] [PDF 685 KB] (338)
57102 Yuan Hao, Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Song Qing-Wen, Yang Fei, Wu Hao
  4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
    Chin. Phys. B   2014 Vol.23 (5): 57102-057102 [Abstract] (191) [HTML 1 KB] [PDF 437 KB] (495)
58501 Qiao Shi-Zhu, Kang Shi-Shou, Qin Yu-Feng, Li Qiang, Zhong Hai, Kang Yun, Yu Shu-Yun, Han Guang-Bing, Yan Shi-Shen, Mei Liang-Mo
  Multi-polar resistance switching and memory effect in copper phthalocyanine junctions
    Chin. Phys. B   2014 Vol.23 (5): 58501-058501 [Abstract] (158) [HTML 1 KB] [PDF 1657 KB] (476)
97302 Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua
  High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
    Chin. Phys. B   2013 Vol.22 (9): 97302-097302 [Abstract] (345) [HTML 1 KB] [PDF 1022 KB] (751)
87202 Bai Yang, Jia Rui, Wu De-Qi, Jin Zhi, Liu Xin-Yu, Lin Mei-Yu
  Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode
    Chin. Phys. B   2013 Vol.22 (8): 87202-087202 [Abstract] (284) [HTML 1 KB] [PDF 1022 KB] (614)
77308 Wang Ying, Yang Ting, Xie Ji-Peng, Lü Wen-Li, Fan Guo-Ying, Liu Su
  Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex:Mechanism and non-volatile memory application
    Chin. Phys. B   2013 Vol.22 (7): 77308-077308 [Abstract] (267) [HTML 1 KB] [PDF 644 KB] (606)
58101 Yang Xin-Chun, Liu Rui-Jiang, Shen Xiang-Qian, Song Fu-Zhan, Jing Mao-Xiang, Meng Xian-Feng
  Enhancement of microwave absorption of nanocomposite BaFe12O19/α-Fe microfibers
    Chin. Phys. B   2013 Vol.22 (5): 58101-058101 [Abstract] (220) [HTML 1 KB] [PDF 864 KB] (794)
37201 Wei Xiao-Ying, Hu Ming, Zhang Kai-Liang, Wang Fang, Zhao Jin-Shi, Miao Yin-Ping
  Analysis of resistive switching behaviors of vanadium oxide thin film
    Chin. Phys. B   2013 Vol.22 (3): 37201-037201 [Abstract] (389) [HTML 0 KB] [PDF 689 KB] (1286)
17302 Deng Xiao-Chuan, Sun He, Rao Cheng-Yuan, Zhang Bo
  High-power SiC MESFET using dual p-buffer layer for S-band power amplifier
    Chin. Phys. B   2013 Vol.22 (1): 17302-017302 [Abstract] (575) [HTML 0 KB] [PDF 407 KB] (667)
107303 Liu Jie-Tao, Xu Bin-Zong, Zhang Jing, Cai Li-Kang, Song Guo-Feng
  Gain-assisted indented plasmonic waveguide for low-threshold nanolaser applications
    Chin. Phys. B   2012 Vol.21 (10): 107303-107303 [Abstract] (691) [HTML 1 KB] [PDF 626 KB] (701)
17303 Cao Lin, Pu Hong-Bin, Chen Zhi-Ming, Zang Yuan
  Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery
    Chin. Phys. B   2012 Vol.21 (1): 17303-017303 [Abstract] (915) [HTML 1 KB] [PDF 260 KB] (818)
87305 Wang Yue-Hu, Zhang Yi-Men, Zhang Yu-Ming, Song Qing-Wen, Jia Ren-Xu
  Al/Ti/4H–SiC Schottky barrier diodes with inhomogeneous barrier heights
    Chin. Phys. B   2011 Vol.20 (8): 87305-087305 [Abstract] (1222) [HTML 0 KB] [PDF 164 KB] (1232)
67303 Liu Fang, Qin Zhi-Xin, Xu Fu-Jun, Zhao Sheng, Kang Xiang-Ning, Shen Bo, Zhang Guo-Yi
  Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN
    Chin. Phys. B   2011 Vol.20 (6): 67303-067303 [Abstract] (1198) [HTML 0 KB] [PDF 279 KB] (1703)
57301 Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Chen Feng-Ping, Tang Xiao-Yan
  Investigation of current transport parameters of Ti/4H–SiC MPS diode with inhomogeneous barrier
    Chin. Phys. B   2011 Vol.20 (5): 57301-057301 [Abstract] (922) [HTML 0 KB] [PDF 1152 KB] (1795)
47301 Zhu Ya-Bin, Hu Wei, Na Jie, He Fan, Zhou Yue-Liang, Chen Cong
  PEDOT:PSS Schottky contacts on annealed ZnO films
    Chin. Phys. B   2011 Vol.20 (4): 47301-047301 [Abstract] (946) [HTML 0 KB] [PDF 3235 KB] (2198)
3024 Huang Rui, Zhu Jing, Yu Rong
  Synthesis and electrical characterization of tungsten oxide nanowires
    Chin. Phys. B   2009 Vol.18 (7): 3024-3030 [Abstract] (1054) [HTML 0 KB] [PDF 7121 KB] (792)
3875 Wang Ding-Qu, Zhou Zhao-Ying, Zhu Rong, Ye Xiong-Ying
  Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes
    Chin. Phys. B   2008 Vol.17 (10): 3875-3879 [Abstract] (884) [HTML 0 KB] [PDF 930 KB] (774)
2707 Long Yun-Ze, Yin Zhi-Hua, Hui Wen, Chen Zhao-Jia, Wan Mei-Xiang
  Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets
    Chin. Phys. B   2008 Vol.17 (7): 2707-2711 [Abstract] (984) [HTML 0 KB] [PDF 1696 KB] (859)
1410 Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong
  Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs
    Chin. Phys. B   2008 Vol.17 (4): 1410-1414 [Abstract] (1051) [HTML 0 KB] [PDF 222 KB] (594)
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