Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2014, Vol. 23 Issue (4): 047201    DOI: 10.1088/1674-1056/23/4/047201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
Yu Ying-Xiaa, Lin Zhao-Juna, Luan Chong-Biaoa, Lü Yuan-Jieb, Feng Zhi-Hongb, Yang Minga, Wang Yu-Tanga
a School of Physics, Shandong University, Jinan 250100, China;
b Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn