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CN 11-5639/O4
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Other articles related with "72.10.-d":
17202 Fateme Nadri, Mohammad Mardaani, Hassan Rabani
  Semi-analytic study on the conductance of a lengthy armchair honeycomb nanoribbon including vacancies, defects, or impurities
    Chin. Phys. B   2019 Vol.28 (1): 17202-017202 [Abstract] (106) [HTML 1 KB] [PDF 514 KB] (86)
97201 Jing Zhang, Hongliang Lv, Haiqiao Ni, Zhichuan Niu, Yuming Zhang
  Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors
    Chin. Phys. B   2018 Vol.27 (9): 97201-097201 [Abstract] (188) [HTML 1 KB] [PDF 849 KB] (146)
47210 Jing-jing Feng, Wei Zhu, Yuan Deng
  An overview of thermoelectric films: Fabrication techniques, classification, and regulation methods
    Chin. Phys. B   2018 Vol.27 (4): 47210-047210 [Abstract] (274) [HTML 1 KB] [PDF 4619 KB] (424)
48403 Min Hong, Zhi-Gang Chen, Jin Zou
  Fundamental and progress of Bi2Te3-based thermoelectric materials
    Chin. Phys. B   2018 Vol.27 (4): 48403-048403 [Abstract] (178) [HTML 1 KB] [PDF 3769 KB] (296)
86701 Xiaoming Cai
  Quench dynamics of ultracold atoms in one-dimensional optical lattices with artificial gauge fields
    Chin. Phys. B   2017 Vol.26 (8): 86701-086701 [Abstract] (168) [HTML 1 KB] [PDF 6164 KB] (153)
77201 Li-Jie Huang, Lian Liu, Rui-Qiang Wang, Liang-Bin Hu
  Coherent charge transport in ferromagnet/semiconductor nanowire/ferromagnet double barrier junctions with the interplay of Rashba spin–orbit coupling, induced superconducting pair potential, and external magnetic field
    Chin. Phys. B   2017 Vol.26 (7): 77201-077201 [Abstract] (127) [HTML 1 KB] [PDF 349 KB] (135)
67201 Zhiyuan Ma, Ying Li, Xian-Jiang Song, Zhi Yang, Li-Chun Xu, Ruiping Liu, Xuguang Liu, Dianyin Hu
  Spin-filter effect and spin-polarized optoelectronic properties in annulene-based molecular spintronic devices
    Chin. Phys. B   2017 Vol.26 (6): 67201-067201 [Abstract] (146) [HTML 1 KB] [PDF 1439 KB] (227)
36302 Ashrafalsadat Shariati, Hassan Rabani, Mohammad Mardaani
  Theoretical description of electron-phonon Fock space for gapless and gapped nanowires
    Chin. Phys. B   2017 Vol.26 (3): 36302-036302 [Abstract] (143) [HTML 1 KB] [PDF 486 KB] (138)
27105 Yong Lei, Jing Su, Hong-Yan Wu, Cui-Hong Yang, Wei-Feng Rao
  On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases
    Chin. Phys. B   2017 Vol.26 (2): 27105-027105 [Abstract] (190) [HTML 1 KB] [PDF 306 KB] (311)
28503 Javad Vahedi, Sahar Ghasab Satoory
  Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect
    Chin. Phys. B   2017 Vol.26 (2): 28503-028503 [Abstract] (235) [HTML 1 KB] [PDF 7578 KB] (281)
117204 Xi-Tong Xu, Shuang Jia
  Recent observations of negative longitudinal magnetoresistance in semimetal
    Chin. Phys. B   2016 Vol.25 (11): 117204-117204 [Abstract] (311) [HTML 1 KB] [PDF 1962 KB] (778)
107106 Yuan-Gang Wang, Zhi-Hong Feng, Yuan-Jie Lv, Xin Tan, Shao-Bo Dun, Yu-Long Fang, Shu-Jun Cai
  Modified model of gate leakage currents in AlGaN/GaN HEMTs
    Chin. Phys. B   2016 Vol.25 (10): 107106-107106 [Abstract] (179) [HTML 1 KB] [PDF 369 KB] (250)
27201 Nai-Qing Liu, Li-Jie Huang, Rui-Qiang Wang, Liang-Bin Hu
  Current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling
    Chin. Phys. B   2016 Vol.25 (2): 27201-027201 [Abstract] (228) [HTML 1 KB] [PDF 373 KB] (236)
96802 He Xiao-Guang, Zhao De-Gang, Jiang De-Sheng, Zhu Jian-Jun, Chen Ping, Liu Zong-Shun, Le Ling-Cong, Yang Jing, Li Xiao-Jing, Zhang Shu-Ming, Yang Hui
  Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
    Chin. Phys. B   2015 Vol.24 (9): 96802-096802 [Abstract] (297) [HTML 1 KB] [PDF 231 KB] (349)
87306 Lv Yuan-Jie, Feng Zhi-Hong, Gu Guo-Dong, Yin Jia-Yun, Fang Yu-Long, Wang Yuan-Gang, Tan Xin, Zhou Xing-Ye, Lin Zhao-Jun, Ji Zi-Wu, Cai Shu-Jun
  Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
    Chin. Phys. B   2015 Vol.24 (8): 87306-087306 [Abstract] (302) [HTML 1 KB] [PDF 361 KB] (287)
47401 Zhu Guo-Bao, Yang Hui-Min, Yang Sheng-Yuan
  Thermal and thermoelectric response from Keldysh formalism with application to gapped Dirac fermions
    Chin. Phys. B   2015 Vol.24 (4): 47401-047401 [Abstract] (272) [HTML 0 KB] [PDF 358 KB] (424)
77105 Lü Yuan-Jie, Feng Zhi-Hong, Lin Zhao-Jun, Guo Hong-Yu, Gu Guo-Dong, Yin Jia-Yun, Wang Yuan-Gang, Xu Peng, Song Xu-Bo, Cai Shu-Jun
  Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2014 Vol.23 (7): 77105-077105 [Abstract] (166) [HTML 1 KB] [PDF 269 KB] (321)
47201 Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Lü Yuan-Jie, Feng Zhi-Hong, Yang Ming, Wang Yu-Tang
  Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2014 Vol.23 (4): 47201-047201 [Abstract] (111) [HTML 1 KB] [PDF 336 KB] (412)
27201 Chai Zheng, Hu Mao-Jin, Wang Rui-Qiang, Hu Liang-Bin
  The effect of k-cubic Dresselhaus spin–orbit coupling on the decay time of persistent spin helix states in semiconductor two-dimensional electron gases
    Chin. Phys. B   2014 Vol.23 (2): 27201-027201 [Abstract] (204) [HTML 1 KB] [PDF 435 KB] (410)
27202 Zhang Yu-Ping, Yin Yi-Heng, Lü Huan-Huan, Zhang Hui-Yun
  Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage
    Chin. Phys. B   2014 Vol.23 (2): 27202-027202 [Abstract] (186) [HTML 1 KB] [PDF 1877 KB] (456)
118102 Pan Yue-Wu, Ren Shou-Tian, Qu Shi-Liang, Wang Qiang
  Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films
    Chin. Phys. B   2013 Vol.22 (11): 118102-118102 [Abstract] (152) [HTML 1 KB] [PDF 593 KB] (426)
67203 Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo
  Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
    Chin. Phys. B   2013 Vol.22 (6): 67203-067203 [Abstract] (255) [HTML 1 KB] [PDF 550 KB] (551)
47102 Cao Zhi-Fang, Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao, Wang Zhan-Guo
  Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2013 Vol.22 (4): 47102-047102 [Abstract] (295) [HTML 1 KB] [PDF 344 KB] (435)
27307 Niu Peng-Bin, Wang Qiang, Nie Yi-Hang
  Transport through artificial single-molecule magnets: Spin-pair state sequential tunneling and Kondo effects
    Chin. Phys. B   2013 Vol.22 (2): 27307-027307 [Abstract] (357) [HTML 1 KB] [PDF 367 KB] (562)
117308 Wang Jun-Cheng, Du Gang, Wei Kang-Liang , Zhang Xing, Liu Xiao-Yan
  Three-dimensional Monte Carlo simulation of bulk fin field effect transistor
    Chin. Phys. B   2012 Vol.21 (11): 117308-117308 [Abstract] (658) [HTML 1 KB] [PDF 290 KB] (1055)
34214 Chen Liang,Qian Yun-Sheng,Zhang Yi-Jun,Chang Ben-Kang
  Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures
    Chin. Phys. B   2012 Vol.21 (3): 34214-034214 [Abstract] (824) [HTML 1 KB] [PDF 273 KB] (866)
27201 Liu Song,Yan Yu-Zhen,Hu Liang-Bin
  Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic, and external electric-field induced spin–orbit couplings
    Chin. Phys. B   2012 Vol.21 (2): 27201-027201 [Abstract] (671) [HTML 1 KB] [PDF 172 KB] (470)
17201 Zhang Xian-Jun, Yang Yin-Tang, Duan Bao-Xing, Chen Bin, Chai Chang-Chun, Song Kun
  New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer
    Chin. Phys. B   2012 Vol.21 (1): 17201-017201 [Abstract] (811) [HTML 1 KB] [PDF 933 KB] (613)
17202 Song Kun, Chai Chang-Chun, Yang Yin-Tang, Chen Bin, Zhang Xian-Jun, Ma Zhen-Yang
  Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal–semiconductor field-effect transistors
    Chin. Phys. B   2012 Vol.21 (1): 17202-17202 [Abstract] (748) [HTML 1 KB] [PDF 454 KB] (640)
17203 Tian Hong-Yu, Wang Jun
  Spin-polarized transport in a normal/ferromagnetic/normal zigzag graphene nanoribbon junction
    Chin. Phys. B   2012 Vol.21 (1): 17203-017203 [Abstract] (1030) [HTML 1 KB] [PDF 172 KB] (919)
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