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CN 11-5639/O4
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Other articles related with "72.20.Fr":
107106 Yuan-Gang Wang, Zhi-Hong Feng, Yuan-Jie Lv, Xin Tan, Shao-Bo Dun, Yu-Long Fang, Shu-Jun Cai
  Modified model of gate leakage currents in AlGaN/GaN HEMTs
    Chin. Phys. B   2016 Vol.25 (10): 107106-107106 [Abstract] (179) [HTML 1 KB] [PDF 369 KB] (250)
87101 Hu Bo
  Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene
    Chin. Phys. B   2015 Vol.24 (8): 87101-087101 [Abstract] (233) [HTML 1 KB] [PDF 244 KB] (328)
16201 Zhu Lin-Li
  Electron-acoustic phonon interaction and mobility in stressed rectangular silicon nanowires
    Chin. Phys. B   2015 Vol.24 (1): 16201-016201 [Abstract] (181) [HTML 0 KB] [PDF 707 KB] (265)
117201 Wei Zi-Jun, Fu Yun-Yi, Liu Jing-Bo, Wang Zi-Dong, Jia Yue-Hui, Guo Jian, Ren Li-Ming, Chen Yuan-Fu, Zhang Han, Huang Ru, Zhang Xing
  Radio-frequency transistors from millimeter-scale graphene domains
    Chin. Phys. B   2014 Vol.23 (11): 117201-117201 [Abstract] (272) [HTML 1 KB] [PDF 2501 KB] (418)
77105 Lü Yuan-Jie, Feng Zhi-Hong, Lin Zhao-Jun, Guo Hong-Yu, Gu Guo-Dong, Yin Jia-Yun, Wang Yuan-Gang, Xu Peng, Song Xu-Bo, Cai Shu-Jun
  Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2014 Vol.23 (7): 77105-077105 [Abstract] (166) [HTML 1 KB] [PDF 269 KB] (320)
47201 Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Lü Yuan-Jie, Feng Zhi-Hong, Yang Ming, Wang Yu-Tang
  Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2014 Vol.23 (4): 47201-047201 [Abstract] (111) [HTML 1 KB] [PDF 336 KB] (412)
67203 Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo
  Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
    Chin. Phys. B   2013 Vol.22 (6): 67203-067203 [Abstract] (255) [HTML 1 KB] [PDF 550 KB] (551)
16102 Kh. S. Karimov, Muhammad Tariq Saeed Chani, Fazal Ahmad Khalid, Adam Khan, Rahim Khan
  Carbon nanotube–cuprous oxide composite based pressure sensors
    Chin. Phys. B   2012 Vol.21 (1): 16102-016102 [Abstract] (810) [HTML 1 KB] [PDF 134 KB] (1164)
57305 Song Jie, Xu Fu-Jun, Huang Cheng-Cheng, Lin Fang, Wang Xin-Qiang, Yang Zhi-Jian, Shen Bo
  Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures
    Chin. Phys. B   2011 Vol.20 (5): 57305-057305 [Abstract] (921) [HTML 0 KB] [PDF 923 KB] (865)
17001 D. Bloor, A. Graham, P. J.Laughlin, D. Lussey
  Comments on `Enhanced piezoresistivity in Ni-silicone rubber composites'
    Chin. Phys. B   2010 Vol.19 (1): 17001-017001 [Abstract] (956) [HTML 0 KB] [PDF 60 KB] (548)
5518 Shi Yu-Lei, Zhou Qing-Li, Zhao Dong-Mei, Zhang Cun-Lin
  Anomalous behaviours of terahertz reflected waves transmitted from GaAs induced by optical pumping
    Chin. Phys. B   2009 Vol.18 (12): 5518-5522 [Abstract] (1054) [HTML 0 KB] [PDF 410 KB] (570)
3024 Huang Rui, Zhu Jing, Yu Rong
  Synthesis and electrical characterization of tungsten oxide nanowires
    Chin. Phys. B   2009 Vol.18 (7): 3024-3030 [Abstract] (1049) [HTML 0 KB] [PDF 7121 KB] (784)
2502 Guo Wei, Hu Yi-Bin, Zhang Yu-Yang, Du Shi-Xuan, Gao Hong-Jun
  Transport properties of boron nanotubes investigated by ab initio calculation
    Chin. Phys. B   2009 Vol.18 (6): 2502-2507 [Abstract] (1213) [HTML 0 KB] [PDF 699 KB] (854)
652 Chang Fang-Gao, Yang Feng, Wang Shao-Xiang, Zhang Na, Song Gui-Lin
  Enhanced piezoresistivity in Ni--silicone rubber composites
    Chin. Phys. B   2009 Vol.18 (2): 652-657 [Abstract] (655) [HTML 0 KB] [PDF 763 KB] (704)
4622 Cao Quan-Jun, Zhang Yi-Men, Zhang Yu-Ming
  A new physics-based self-heating effect model for 4H-SiC MESFETs
    Chin. Phys. B   2008 Vol.17 (12): 4622-4626 [Abstract] (1052) [HTML 0 KB] [PDF 620 KB] (580)
4292 Zhang Jia-Hong, Huang Qing-An, Yu Hong, Lei Shuang-Ying
  Theoretical study of electromechanical property in a p-type silicon nanoplate for mechanical sensors
    Chin. Phys. B   2008 Vol.17 (11): 4292-4299 [Abstract] (883) [HTML 0 KB] [PDF 309 KB] (479)
2689 Zhang Jin-Feng, Mao Wei, Zhang Jin-Cheng, Hao Yue
  The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures
    Chin. Phys. B   2008 Vol.17 (7): 2689-2695 [Abstract] (1108) [HTML 0 KB] [PDF 743 KB] (1117)
1410 Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong
  Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs
    Chin. Phys. B   2008 Vol.17 (4): 1410-1414 [Abstract] (1050) [HTML 0 KB] [PDF 222 KB] (591)
3766 Hao Guo-Dong, Ban Shi-Liang, Jia Xiu-Min
  Pressure effect on the electron mobility in AlAs/GaAs quantum wells
    Chin. Phys. B   2007 Vol.16 (12): 3766-3771 [Abstract] (889) [HTML 0 KB] [PDF 230 KB] (497)
2431 Ji Zhi-Gang, Xu Ming-Zhen, Tan Chang-Hua
  Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method
    Chin. Phys. B   2006 Vol.15 (10): 2431-2438 [Abstract] (1086) [HTML 0 KB] [PDF 275 KB] (503)
1060 Zhang Jin-Feng, Wang Chong, Zhang Jin-Cheng, Hao Yue
  Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures
    Chin. Phys. B   2006 Vol.15 (5): 1060-1066 [Abstract] (1368) [HTML 0 KB] [PDF 357 KB] (914)
636 Chang Yuan-Cheng, Zhang Yi-Men, Zhang Yu-Ming
  Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures
    Chin. Phys. B   2006 Vol.15 (3): 636-640 [Abstract] (1292) [HTML 0 KB] [PDF 261 KB] (516)
1100 Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming
  Analytical model of electron transport characteristics for 4H-SiC material and devices
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504 Zhu Kai-gui, Shi Jian-zhong, Zhang Li-de
  EFFECT OF TEMPERATURE ON ELECTRICAL RESISTIVITY OF A HYDROGENATED LaNi5 THIN FILM
    Chin. Phys. B   1998 Vol.7 (7): 504-509 [Abstract] (598) [HTML 0 KB] [PDF 177 KB] (431)
700 SHENG WEI-DONG, XIA JIAN-BAI
  SUPPRESSION OF BALLISTIC ELECTRON TRANSMISSION THROUGH A SEMICONDUCTOR Π-STRUCTURE BY AN EXTERNAL TRANSVERSE ELECTRIC FIELD
    Chin. Phys. B   1996 Vol.5 (9): 700-704 [Abstract] (792) [HTML 0 KB] [PDF 161 KB] (295)
200 ZHU MEI-FANG, DING YI-BING, ZONG JUN, LIU HONG
  SIMULATION OF OCCUPATION FUNCTION FOR THERMALLY STIMULATED CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS
    Chin. Phys. B   1994 Vol.3 (3): 200-207 [Abstract] (548) [HTML 0 KB] [PDF 198 KB] (299)
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