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Chin. Phys. B, 2013, Vol. 22(5): 056102    DOI: 10.1088/1674-1056/22/5/056102
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Structures and physical properties of R2TX3 compounds

Pan Zhi-Yan (潘志艳), Cao Chong-De (曹崇德), Bai Xiao-Jun (白晓军), Song Rui-Bo (宋瑞波), Zheng Jian-Bang (郑建邦), Duan Li-Bing (段利兵)
Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education, Xi'an 710072, China
Abstract  Rare-earth compounds have been a subject of intensive research based on the unique electronic structures of the rare-earth elements. Novel ternary intermetallic compounds R2TX3 (R=rare-earth element or U, T=transition-metal element, X=Si, Ge, Ga, In) is a significant branch of this research field due to their complex and intriguing physical properties, such as magnetic order at low temperature, spin-glass behavior, Kondo effect, heavy fermion behavior, and so on. The unique physical properties of R2TX3 compounds are related to distinctive electronic structures, crystal structures, micro-interaction, and external environment. Most R2TX3 compounds crystallize in AlB2-type or derived AlB2-type structure and exhibit many similar properties. This paper gives a concise review of the structures and physical properties of these compounds. Spin glass, magnetic susceptibility, resistivity, and specific heat of R2TX3 compounds are discussed.
Keywords:  R2TX3 compounds      structure      physical properties  
Received:  03 July 2012      Revised:  06 December 2012      Accepted manuscript online: 
PACS:  61.50.-f (Structure of bulk crystals)  
  75.20.En (Metals and alloys)  
  72.80.Ga (Transition-metal compounds)  
  75.30.Gw (Magnetic anisotropy)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51171152), the Doctoral Fund of Ministry of Education of China (Grant No. 20126102110048), the Research Fund of State Key Laboratory of Solidification of China (Grant No. SKLSP201202), the Open Research Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices (UESTC) of China (Grant No. KFJJ201103), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2012JC2-02).
Corresponding Authors:  Cao Chong-De     E-mail:  caocd@nwpu.edu.cn

Cite this article: 

Pan Zhi-Yan (潘志艳), Cao Chong-De (曹崇德), Bai Xiao-Jun (白晓军), Song Rui-Bo (宋瑞波), Zheng Jian-Bang (郑建邦), Duan Li-Bing (段利兵) Structures and physical properties of R2TX3 compounds 2013 Chin. Phys. B 22 056102

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