Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

doi:10.1088/1674-1056/20/5/057503

Abstract This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermally-oxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ga⁺ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga⁺ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.

Keywords: thermal relaxation exchange bias ion irradiation energy barrier

Received: 20 July 2010
Revised: 16 December 2010
Accepted manuscript online:

PACS:	75.60.Lr	(Magnetic aftereffects)
	75.60.Jk	(Magnetization reversal mechanisms)
	75.60.Ej	(Magnetization curves, hysteresis, Barkhausen and related effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50671048).

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Qi Xian-Jin(祁先进), Wang Yin-Gang(王寅岗), Miao Xue-Fei(缪雪飞), Li Zi-Quan(李子全), and Huang Yi-Zhong(黄一中) Influence of Ga⁺ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers 2011 Chin. Phys. B 20 057503

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Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

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Influence of Ga⁺ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers