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Chin. Phys. B, 2015, Vol. 24(10): 107803    DOI: 10.1088/1674-1056/24/10/107803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Simulation of positron backscattering and implantation profiles using Geant4 code

Huang Shi-Juana b, Pan Zi-Wena b, Liu Jian-Danga b, Han Rong-Diana b, Ye Bang-Jiaoa b
a Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China;
b State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026, China
Abstract  For the proper interpretation of the experimental data produced in slow positron beam technique, the positron implantation properties are studied carefully using the latest Geant4 code. The simulated backscattering coefficients, the implantation profiles, and the median implantation depths for mono-energetic positrons with energy range from 1 keV to 50 keV normally incident on different crystals are reported. Compared with the previous experimental results, our simulation backscattering coefficients are in reasonable agreement, and we think that the accuracy may be related to the structures of the host materials in the Geant4 code. Based on the reasonable simulated backscattering coefficients, the adjustable parameters of the implantation profiles which are dependent on materials and implantation energies are obtained. The most important point is that we calculate the positron backscattering coefficients and median implantation depths in amorphous polymers for the first time and our simulations are in fairly good agreement with the previous experimental results.
Keywords:  positron beam      backscattering coefficient      implantation profile      Geant4  
Received:  17 April 2015      Revised:  07 July 2015      Published:  05 October 2015
PACS:  78.70.-g (Interactions of particles and radiation with matter)  
  78.70.Bj (Positron annihilation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11175171 and 11105139).
Corresponding Authors:  Ye Bang-Jiao     E-mail:  bjye@ustc.edu.cn

Cite this article: 

Huang Shi-Juan, Pan Zi-Wen, Liu Jian-Dang, Han Rong-Dian, Ye Bang-Jiao Simulation of positron backscattering and implantation profiles using Geant4 code 2015 Chin. Phys. B 24 107803

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