Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

doi:10.1088/1674-1056/22/5/059501

Abstract We investigate the impact of heavy ion irradiation on hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.

Keywords: Geant4 multiple-bit upset (MBU) critical charge spacing between adjacent cells

Received: 29 November 2012
Revised: 21 December 2012
Accepted manuscript online:

PACS:	95.75.-z	(Observation and data reduction techniques; computer modeling and simulation)
	61.82.Fk	(Semiconductors)
	24.10.Lx	(Monte Carlo simulations (including hadron and parton cascades and string breaking models))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

Corresponding Authors: Liu Jie
E-mail: j.liu@impcas.ac.cn

Cite this article:

Geng Chao (耿超), Liu Jie (刘杰), Xi Kai (习凯), Zhang Zhan-Gang (张战刚), Gu Song (古松), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Duan Jing-Lai (段敬来), Yao Hui-Jun (姚会军), Mo Dan (莫丹) Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence 2013 Chin. Phys. B 22 059501

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Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

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