Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

doi:10.1088/1674-1056/ac5d32

Abstract We investigate the angular dependence of proton-induced single event transient (SET) in silicon-germanium heterojunction bipolar transistors. Experimental results show that the overall SET cross section is almost independent of proton incident angle. However, the proportion of SET events with long duration and high integral charge collection grows significantly with the increasing angle. Monte Carlo simulations demonstrate that the integral cross section of proton incident events with high ionizing energy deposition in the sensitive volume tends to be higher at larger incident angles, which is associated with the angular distribution of proton-induced secondary particles and the geometry of sensitive volume.

Keywords: heterojunction bipolar transistor proton irradiation single event transient angular effect

Received: 31 December 2021
Revised: 08 March 2022
Accepted manuscript online: 14 March 2022

PACS:	61.80.Ed	(γ-ray effects)
	61.80.Jh	(Ion radiation effects)
	85.50.Gk	(Non-volatile ferroelectric memories)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11775167 and 12105252) and the Natural Science Foundation of Chongqing, China (Grant No. cstc2021jcyj-bsh0246).

Corresponding Authors: Jianan Wei
E-mail: weijianan93@163.com

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Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚) Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors 2022 Chin. Phys. B 31 086106

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Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

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