A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

doi:10.1088/1674-1056/ac0038

Abstract A three-dimensional (3D) silicon-carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFET) with a heterojunction diode (HJD-TMOS) is proposed and studied in this work. The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate. When the device is in the turn-on state, the body parasitic diode can be effectively controlled by the embedded HJD, the switching loss thus decreases for the device. Moreover, a highly-doped P⁺ layer is encircled the gate oxide on the same side as the HJD and under the gate oxide, which is used to lighten the electric field concentration and improve the reliability of gate oxide layer. Physical mechanism for the HJD-TMOS is analyzed. Comparing with the conventional device with the same level of on-resistance, the breakdown voltage of the HJD-TMOS is improved by 23.4%, and the miller charge and the switching loss decrease by 43.2% and 48.6%, respectively.

Keywords: heterojunction diode SiC MOSFET switching loss on-state resistance

Received: 13 April 2021
Revised: 05 May 2021
Accepted manuscript online: 12 May 2021

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	51.50.+v	(Electrical properties)

Fund: Project supported by the Natural Science Foundation Project of Chongqing Science and Technology Commission, China (Grant No. cstc2020jcyj-msxmX0243), the Fundamental Research Funds for the Central Universities, China (Grant No. 2020CDJ-LHZZ-024), and the Chongqing Technology Innovation and Application Development Key Project, China (Grant No. cstc2019jscx-zdztzxX0051).

Corresponding Authors: Zhi-Yong Huang
E-mail: zyhuang@cqu.edu.cn

Cite this article:

Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读) A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode 2022 Chin. Phys. B 31 018504

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A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

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