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Chin. Phys. B, 2020, Vol. 29(5): 057307    DOI: 10.1088/1674-1056/ab821e

High performance InAlN/GaN high electron mobility transistors for low voltage applications

Minhan Mi(宓珉瀚)1, Meng Zhang(张濛)1, Sheng Wu(武盛)1, Ling Yang(杨凌)2, Bin Hou(侯斌)1, Yuwei Zhou(周雨威)2, Lixin Guo(郭立新)3, Xiaohua Ma(马晓华)1, Yue Hao(郝跃)1
1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
Abstract  A high performance InAlN/GaN high electron mobility transistor (HEMT) at low voltage operation (6-10 V drain voltage) has been fabricated. An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance. Highly scaled lateral dimension (1.2 μm source-drain spacing) is to reduce access resistance. Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance (Ron) of 0.9 Ω·mm. Small signal measurement shows an fT/fmax of 131 GHz/196 GHz. Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7% (Vds=6-10 V) power added efficiency (PAE) associated with 1.6-2.4 W/mm output power density at 8 GHz. These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field, but also are attractive for low voltage mobile compatible rf applications.
Keywords:  InAlN/GaN      high electron mobility transistor (HEMT)      low voltage  
Received:  25 February 2020      Revised:  16 March 2020      Published:  05 May 2020
PACS:  73.50.-h (Electronic transport phenomena in thin films)  
  73.61.-r (Electrical properties of specific thin films)  
  85.90.+h (Other topics in electronic and magnetic devices and microelectronics)  
Fund: Project supported by the China Postdoctoral Science Foundation (Grant No. 2018M640957), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101196761), the National Natural Science Foundation of China (Grant No. 61904135), the National Defense Pre-Research Foundation of China (Grant No. 31513020307), and the Natural Science Foundation of Shaanxi Province of China (Grant No. 2020JQ-316).
Corresponding Authors:  Minhan Mi, Meng Zhang     E-mail:;

Cite this article: 

Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃) High performance InAlN/GaN high electron mobility transistors for low voltage applications 2020 Chin. Phys. B 29 057307

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