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Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates |
| Xue Ji(吉雪)1,2, Wen-Xiu Dong(董文秀)2, Yu-Min Zhang(张育民)1,2, Jian-Feng Wang(王建峰)2, Ke Xu(徐科)2,3 |
1 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 School of Information Science and Technology, University of Science and Technology of China, Hefei 230026, China |
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Abstract One-port surface acoustic wave resonators (SAWRs) are fabricated on semi-insulating high-quality bulk GaN and GaN film substrates, respectively. The semi-insulating GaN substrates are grown by hydride vapor phase epitaxy (HVPE) and doped with Fe. The anisotropy of Rayleigh propagation and the electromechanical coupling coefficient in Fe-doped GaN are investigated. The difference in resonance frequency between the SAWs between[1120] GaN and[1100] GaN is about 0.25% for the Rayleigh propagation mode, which is smaller than that of non-intentionally doped GaN film (~1%) reported in the literature. The electromechanical coupling coefficient of Fe-doped GaN is about 3.03%, which is higher than that of non-intentionally doped GaN film. The one-port SAWR fabricated on an 8-μ Fe-doped GaN/sapphire substrate has a quality factor of 2050, and that fabricated on Fe-doped bulk GaN has a quality factor as high as 3650. All of our results indicate that high-quality bulk GaN is a very promising material for application in SAW devices.
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Received: 10 December 2018
Revised: 07 March 2019
Accepted manuscript online:
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PACS:
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77.65.Dq
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(Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics)
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73.61.Ey
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(III-V semiconductors)
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81.05.Ea
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(III-V semiconductors)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403002), the National Science Fund for Distinguished Young Scholars, China (Grant No. Y3CHC11001), and the National Natural Science Foundation of China (Grant No. 11604368). |
Corresponding Authors:
Ke Xu
E-mail: kxu2006@sinano.ac.cn
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Cite this article:
Xue Ji(吉雪), Wen-Xiu Dong(董文秀), Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), Ke Xu(徐科) Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates 2019 Chin. Phys. B 28 067701
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