Thermal analysis of GaN-based laser diode mini-array

doi:10.1088/1674-1056/27/9/094208

Abstract

Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.

Keywords: GaN laser diode laser diode array thermal analysis temperature distribution

Received: 03 April 2018
Revised: 10 May 2018
Accepted manuscript online:

PACS:

42.55.Px

(Semiconductor lasers; laser diodes)

Fund:

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0402002, 2016YFB0401803, 2017YFB0405002, 2017YFB0405003, and 2017YFB0405005), the National Natural Science Foundation of China (Grant Nos. 61574160, 61704184, and 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (Grant No. XDA09020401), the Chinese Academy of Science Visiting Professorship for Senior International Scientists (Grant No. 2013T2J0048), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20170430), and the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows, China (Grant No. 2016LH0026).

Corresponding Authors: Shu-Ming Zhang
E-mail: smzhang2010@sinano.ac.cn

Cite this article:

Jun-Jie Hu(胡俊杰), Shu-Ming Zhang(张书明), De-Yao Li(李德尧), Feng Zhang(张峰), Mei-Xin Feng(冯美鑫), Peng-Yan Wen(温鹏雁), Jian-Pin Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉) Thermal analysis of GaN-based laser diode mini-array 2018 Chin. Phys. B 27 094208

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