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Chin. Phys. B, 2016, Vol. 25(11): 117301    DOI: 10.1088/1674-1056/25/11/117301

Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

Miao Geng(耿苗)1,2, Pei-Xian Li(李培咸)1, Wei-Jun Luo(罗卫军)2, Peng-Peng Sun(孙朋朋)2, Rong Zhang(张蓉)1,2, Xiao-Hua Ma(马晓华)1
1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor (HEMT) switch. The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range. The percentage errors Eij within 3.83% show the great agreement between the simulated S-parameters and the measured data.
Keywords:  GaN high-electron-mobility transistor switch      small signal modeling      parameter extraction      error percentage  
Received:  06 July 2016      Revised:  10 August 2016      Published:  05 November 2016
PACS:  73.61.Ey (III-V semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.40.Bh (Computer-aided design of microcircuits; layout and modeling)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
Corresponding Authors:  Xiao-Hua Ma     E-mail:

Cite this article: 

Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华) Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method 2016 Chin. Phys. B 25 117301

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