100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT=249 GHz and fmax=415 GHz

doi:10.1088/1674-1056/23/3/038501

Abstract InAlAs/InGaAs high electron mobility transistors (HEMTs) on an InP substrate with well-balanced cutoff frequency f_T and maximum oscillation frequency f_max are reported. An InAlAs/InGaAs HEMT with 100-nm gate length and gate width of 2×50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance g_m.max of 1051 mS/mm, and drain–gate breakdown voltage BV_DG of 5.92 V. In addition, this device exhibits f_T=249 GHz and f_max=415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 Ω·mm. Moreover, the f_T obtained in this work is the highest ever reported in 100-nm gate length InAlAs/InGaAs InP-based HEMTs. The outstanding g_m.max, f_T, f_max, and good BV_DG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.

Keywords: InP high electron mobility transistor asymmetrically recessed gate cutoff frequency f_T maximum oscillation frequency f_max

Received: 25 June 2013
Revised: 02 September 2013
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB327502).

Corresponding Authors: Jin Zhi
E-mail: jinzhi@ime.ac.cn

Cite this article:

Wang Li-Dan (汪丽丹), Ding Peng (丁芃), Su Yong-Bo (苏永波), Chen Jiao (陈娇), Zhang Bi-Chan (张毕禅), Jin Zhi (金智) 100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f_T=249 GHz and f_max=415 GHz 2014 Chin. Phys. B 23 038501

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100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT=249 GHz and fmax=415 GHz

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100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f_T=249 GHz and f_max=415 GHz