Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films

doi:10.1088/1674-1056/22/3/036103

Abstract Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor (VDMOS) devices with composite SiO₂-–Si₃N₄ film gate are investigated. The relationships among the important electrical parameters of the samples with different thickness SiO₂-–Si₃N₄ films, such as threshold voltage, breakdown voltage, and on-state resistance in accumulated dose, are discussed. The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose. However, the relationships between the threshold voltages of the samples and the accumulated dose are more complex, not only positive drift, but also negative drift. At the end of the total dose experiment, we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies. We find that the samples with appropriate thickness ratio SiO₂-–Si₃N₄ films have a good radiation-hardening ability. This method may be useful in solving both the SEGR and the total dose problems with the composite SiO₂-–Si₃N₄films.

Keywords: power VDMOS device total dose effects single event effects composite SiO₂–Si₃N₄ films

Received: 06 May 2012
Revised: 14 November 2012
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	61.80.Ed	(γ-ray effects)
	61.80.Jh	(Ion radiation effects)
	81.40.Wx	(Radiation treatment)

Corresponding Authors: Gao Bo
E-mail: gaobo@ime.ac.cn

Cite this article:

Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟) Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films 2013 Chin. Phys. B 22 036103

[1]	Dodd P E, Shaneyfelt M R, Draper B L, Young, R W, Savignon D, Witcher J B, Vizkelethy G, Schwanki J R, Shen Z J, Shea P, Landowski M and Dalton S M 2009 IEEE Trans. Nucl. Sci. 56 3456
[2]	Haran A, Barak J, David D, Refaeli N, Fischer B E, Voss K O, Du G and Heiss M 2007 IEEE Trans. Nucl. Sci. 54 2488
[3]	Zhang E X, Newaz A K M, Wang B, Bhandaru S, Zhang C X, Fleetwood D M, Bolotin K I, Pantelides S T, Alles M L, Schrimpf R D, Weiss S M, Reed R A and Weller R A 2011 IEEE Trans. Nucl. Sci. 58 2961
[4]	Irom F, Nguyen D N, Underwood M L and Virtanen A 2010 IEEE Trans. Nucl. Sci. 57 3329
[5]	Hands A, Morris P, Ryden K, Dyer C, Truscott P, Chugg A and Parker S 2011 IEEE Trans. Nucl. Sci. 58 2687
[6]	Miller F, Luu A, Prud'homme F, Poirot P, Gaillard R, Buard N and Carrire T 2006 IEEE Trans. Nucl. Sci. 53 3145
[7]	Liu S, Lauenstein J M, Ferlet-Cavrois V, Marec R, Hernandez F, Scheick L, Bezerra F, Muschitiello M, Poivey C, Sukhaseum N, Coquelet L, Cao H, Carrier D, Brisebois M A, Mangeret R, Ecoffet R, LaBel K, Zafrani M and Sherman P 2011 IEEE Trans. Nucl. Sci. 58 2991
[8]	Johnson G H and Galloway K F 1996 IEEE Nuclear and Space Radiation Effects Conference Short Course, July 15-19, 1996 India Wells, California,
[9]	Fraass R G and Tallon R W 1978 IEEE Trans. Nucl. Sci. 25 1613
[10]	Dunn G J and Wyatt P W 1989 IEEE Trans. Nucl. Sci. 36 2161
[11]	Ma T P, Yun B H, DiMaria D J and Scoggan G A 1976 J. Appl. Phys. 47 1599
[12]	Zhang E X, Qian C, Zhang Z X, Wang X, Zhang G Q, Li N, Zheng Z S and Liu Z L 2005 Chin. J. Sem. 26 1269 (in Chinese)
[13]	Zhang G Q, Lu W, Yu X F, Guo Q, Ren D Y and Yan R L 1999 Chin. J. Sem. 20 437 (in Chinese)
[14]	Cricchi J R and Barbe D F 1971 Appl. Phys. Lett. 19 49
[15]	Lee S C, Raparla A, Li Y F, Gasiot G, Schrimpf R D, Fleetwood D M, Galloway K F, Featherby M and Johnson D 2000 IEEE Trans. Nucl. Sci. 47 2297
[16]	Takahashi Y, Ohnishi K, Fujimaki T and Yoshikawa M 1999 IEEE Trans. Nucl. Sci. 46 1578
[17]	Saks N S 1978 IEEE Trans. Nucl. Sci. 25 1226

[1]	Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool Zhi-Feng Lei(雷志锋), Zhan-Gang Zhang(张战刚), Yun-Fei En(恩云飞), Yun Huang(黄云). Chin. Phys. B, 2018, 27(6): 066105.
[2]	Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥). Chin. Phys. B, 2018, 27(10): 108501.
[3]	Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥). Chin. Phys. B, 2017, 26(8): 088502.
[4]	Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Zhao Fa-Zhan (赵发展), Liu Gang (刘刚), Han Zheng-Sheng (韩郑生), Geng Chao (耿超), Liu Jian-De (刘建德), Xi Kai (习凯), Duan Jing-Lai (段敬来), Yao Hui-Jun (姚会军), Mo Dan (莫丹), Luo Jie (罗捷), Gu Song (古松), Liu Tian-Qi (刘天奇). Chin. Phys. B, 2013, 22(9): 096103.
[5]	Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Su Hong (苏弘), Duan Jing-Lai (段敬来), Mo Dan (莫丹), Yao Hui-Jun (姚会军), Luo Jie (罗捷), Gu Song (古松), Geng Chao (耿超), Xi Kai (习凯). Chin. Phys. B, 2013, 22(8): 086102.
[6]	Impact of substrate bias on radiation-induced edge effects in MOSFETs Hu Zhi-Yuan(胡志远), Liu Zhang-Li(刘张李), Shao-Hua(邵华), Zhang Zheng-Xuan(张正选), Ning Bing-Xu(宁冰旭), Chen Ming(陈明), Bi Da-Wei(毕大炜), and Zou Shi-Chang(邹世昌) . Chin. Phys. B, 2011, 20(12): 120702.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films

Cite this article:

Online attention

Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films