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Chin. Phys. B, 2013, Vol. 22(3): 036103    DOI: 10.1088/1674-1056/22/3/036103
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films

Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Song Li-Mei, Zhang Yan-Fei, Teng Rui, Wu Hai-Zhou
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor (VDMOS) devices with composite SiO2-–Si3N4 film gate are investigated. The relationships among the important electrical parameters of the samples with different thickness SiO2-–Si3N4 films, such as threshold voltage, breakdown voltage, and on-state resistance in accumulated dose, are discussed. The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose. However, the relationships between the threshold voltages of the samples and the accumulated dose are more complex, not only positive drift, but also negative drift. At the end of the total dose experiment, we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies. We find that the samples with appropriate thickness ratio SiO2-–Si3N4 films have a good radiation-hardening ability. This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-–Si3N4 films.
Keywords:  power VDMOS device      total dose effects      single event effects      composite SiO2–Si3N4 films     
Received:  06 May 2012      Published:  01 February 2013
PACS:  61.82.Fk (Semiconductors)  
  61.80.Ed (γ-ray effects)  
  61.80.Jh (Ion radiation effects)  
  81.40.Wx (Radiation treatment)  
Corresponding Authors:  Gao Bo     E-mail:  gaobo@ime.ac.cn

Cite this article: 

Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Song Li-Mei, Zhang Yan-Fei, Teng Rui, Wu Hai-Zhou Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films 2013 Chin. Phys. B 22 036103

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